Canon Anelva Corporation

Hiroyuki Hosoya

Yoshinori Nagamine

Koji Tsunekawa

Shinji Furukawa

Naoki Watanabe

A manufacturing method of a magneto-resistive effect device, the manufacturing method includes steps of: forming an Mg film on a substrate on which a reference layer is formed and oxidizing the Mg film to form an MgO layer on the reference layer; heating the substrate on which the MgO layer is formed; after the step of heating, forming an Mg layer on the MgO layer; cooling the substrate on which the Mg layer is formed; and forming a free layer on the Mg layer in a state where the substrate is cooled by the cooling step, and the step of forming the Mg layer, the step of cooling, and the step of forming the free layer are performed in the process same process chamber.

Manufacturing method of magneto-resistive effect device

The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.

Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium

According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber. A sputtering apparatusincludes a substrate holderconfigured to support a substrate W; magnet holdersthat are disposed around the substrate holder; magnetsthat are movably loaded on the magnet holders; supporting membersthat protrude from the substrate holder so as to face the magnets; connecting membersthat protrude from the magnets to face the substrate holder; a rotation mechanismconfigured to rotationally move at least one of the substrate holder and the magnet holders; and a connection switching mechanismconfigured to move, when positions of the supporting members and the connecting members are matched to each other by rotational movement of the rotation mechanism, the substrate holder upward and downward to engage the supporting members and the connecting members with each other or separate the supporting members and the connecting members from each other, and switch whether or not to apply a magnetic field to the substrate W.

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Tama, Japan

Hiroyuki Hosoya