Mitsubishi Electric Corporation

Seikosha Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Corporation

Shinko Pantec Co., Ltd.

Renesas Technology Corp.

Tokico, Ltd.

Kurita Water Industries Ltd.

Seiko Precision Inc.

S-tec Corporation

Hitachi Plant Engineering Construction Co., Ltd.

Hori Glass Co., Ltd.

Naomoto Corporation

Horiba Co. Ltd.

Hiroyuki Harada

Akio Tajima

Kiyoshi Hirai

Takashi Sasaki

Shinichi Yasui

Hiroko Kobayashi

Kozo Harada

Mamoru Nagao

Takashi Nishimura

Fumio Otsuka

Yuki Yoshioka

Yasumichi Hatanaka

Koji Yamada

Haruo Inoue

Nobuhiro Miki

Matagoro Maeno

Taishi Sasaki

Tsuyoshi Hayakawa

Masaki Taya

Masako Arizumi

Toshiro Fukutome

Yoshihiro Eto

Norio Terasawa

Masahiro Sakata

Tadahiro Ohmi

Yoshihiro Yamaguchi

Hajime Oda

Tadashi Nakagawa

Junji Fujino

Akira Asari

Naoki Yoshimatsu

Yuji Imoto

Akira Kosugi

Mikio Ishihara

Tsunemi Kawashima

Hiroki Shiota

Shigeyuki Akiyama

Osamu Usui

Kiyoshi Fujii

Yusuke Kaji

Michio Nitta

Takamasa Iwai

Masayoshi Shinkai

Toshihiko Uno

Akihiko Hogetsu

Yuji Nakagaki

Masayuki Mafune

Tadashi Yamamoto

Takashi Kogo

Akiko Miyake

Masako Fujitomi

Noriyuki Kurokawa

Isao Kurihashi

Terufumi Iwata

Toshihiro Oyama

Masami Nojima

Teruki Umezawa

Jun Kurimoto

Takashi Kougo

Harukazu Shimizu

Tadashi Nagakawa

Hajima Oda

Tsutomu Koinuma

Tetuo Shimizu

Teruyuki Morioka

An object of the present invention is to suppress a crack in a sealing resin and a warpage in a semiconductor device in a power semiconductor device. A power semiconductor device includes: a semiconductor element; a terminal; a chassis; and a sealing resin sealing the semiconductor element and the terminal in the chassis. The sealing resin includes: a first sealing resin covering at least the semiconductor element; and a second sealing resin formed on an upper portion of the first sealing resin, and in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal.

Power semiconductor device with first and second sealing resins of different coefficient of thermal expansion

A semiconductor device includes: semiconductor elements and; a lead frame including a mount having an upper surface over which the semiconductor elements and are mounted; a sealing resin sealing the lead frame and the semiconductor elements and so that outer leads and of the lead frame protrude outwardly; and a resin wall located on an inner lead between the outer lead and the mount of the lead frame. A vertical thickness of the resin wall is greater than a vertical thickness from a lower surface of the sealing resin to a lower end of the lead frame.

Semiconductor device and power converter

A semiconductor chip () is disposed on the insulation substrate (). A lead frame () is bonded to an upper surface of the semiconductor chip (). A sealing resin () covers the semiconductor chip (), the insulation substrate (), and the lead frame (). A stress mitigation resin () having a lower elastic modulus than that of the sealing resin () is partially applied to an end of the lead frame ().

Semiconductor device and power conversion device

An object of the present invention is to provide a highly reliable semiconductor device that allows voids remaining in a bonding material to be reduced. The semiconductor device includes a semiconductor chip, an insulation substrate, a metal base plate, a resin section, and a bump. The semiconductor chip is warped into a concave shape. On the insulation substrate, the semiconductor chip is mounted by bonding. The metal base plate has the insulation substrate mounted thereon and has a heat dissipation property. The resin section seals the insulation substrate and the semiconductor chip. The bump is disposed in a joint between the semiconductor chip and the insulation substrate. A warp amount of the semiconductor chip warped into a concave shape is equal to or greater than 1 &#x3bc;m and less than a height of the bump.

Semiconductor device

A semiconductor device including: an insulating substrate having a conductor layer on the upper face and the lower face and a semiconductor element mounted on the upper conductor layer; a base plate bonded to the lower conductor layer; a case member surrounding the insulating substrate and bonded to the surface of the base plate to which the conductor layer bonded to the lower face; a first filler being a silicone composition filled in a region surrounded by the base plate and the case member; and a second filler being injected into a region below the first filler and surrounding a peripheral edge portion of the insulating substrate, whose height from the base plate is higher than the upper face and is lower than a bonding face between the semiconductor element and the upper conductor layer.

Semiconducter device with filler to suppress generation of air bubbles and electric power converter

A semiconductor device includes: an insulating substrate having an upper surface on which a semiconductor element is mounted; a base plate joined to a lower surface of the insulating substrate; a case member that surrounds the insulating substrate and that is in contact with a surface of the base plate to which the insulating substrate is joined; a sealing resin provided in a region surrounded by the base plate and the case member; a cover member facing a surface of the sealing resin and fixed to the case member; and a holding plate, a lower surface of the holding plate and a portion of a side surface of the holding plate being in close contact with the surface of the sealing resin, an upper surface of the holding plate being fixed to and protruding from a surface of the cover member facing the surface of the sealing resin.

Semiconductor device and method for manufacturing same

Herein provided are: a ceramic board; a semiconductor element for electric power, on one surface of which an electrode is formed, and the other surface of which is bonded to the ceramic board; a lead terminal, one end side of which is bonded to the electrode, and the other end side of which is to be electrically connected to an outside thereof; and a sealing member by which the semiconductor element for electric power is sealed together with a part, in the lead terminal, bonded to the electrode; wherein, near an end in said one end side of the lead terminal, an inclined surface is formed which becomes farther from the circuit board as it becomes closer to the end.

Shaped lead terminals for packaging a semiconductor device for electric power

The power module includes: an insulating substrate having an upper surface on which a semiconductor element is mounted; a base plate joined to a lower surface of the insulating substrate; a case member surrounding the insulating substrate and adhered to the base plate; a sealing resin provided in a region surrounded by the base plate and the case member, so as to seal the insulating substrate; and a holding plate projecting from an inner wall of the case member to above an outer peripheral portion of the insulating substrate, the holding plate being fixed to the inner wall, the holding plate being in contact with the sealing resin.

Power module

A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of &#x2212;55&#xb0; C. or lower, and a needle penetration of 30 to 50 after storage at 175&#xb0; C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.

Power semiconductor device

Provided is a process for producing an automotive glass with a member in a highly efficient and space-saving manner. The process for producing an automotive glass with a member comprises bonding together an adhesion surface of an adherend and an adhesion surface of an automotive glass using an adhesive, and then curing the adhesive using a superheated steam generator, thereby attaching the adherend to the automotive glass; wherein the superheated steam generator comprises (1) a boiler part for generating steam, (2) a superheating unit for superheating the steam generated in the boiler part, and (3) a superheated steam vessel equipped internally with one or more heaters and one or more superheated steam outlets for discharging the superheated steam supplied from the superheating unit; and wherein the step of curing the adhesive is performed by covering the adherend placed on the automotive glass with the superheated steam vessel, spraying the superheated steam from the one or more superheated steam outlets to the adherend, and then spraying dry gas.

Process for producing automotive glass with member

The invention provides a system and a method for generating high pressure hydrogen that is able to efficiently and safely generate hydrogen by only the electrolysis of water even when using electric power generated by a frequently varying natural energy, such as sunlight, without using any compressors. The system comprises an electrolysis cell using polyelectrolyte membranes, particularly a double-polarity multi-layered type electrolysis cell having a specified structure disposed in a vessel for storing generated hydrogen, preferably for storing cooled hydrogen under a high pressure hydrogen atmosphere. High pressure hydrogen is generated by electrolysis of pure water using the electrolysis cell by suppressing the pressure applied to the cell to a pressure below the pressure resistance of the cell using a differential pressure sensor and pressure controller.

System and method for generating high pressure hydrogen

In a digital amplifier, a time controller generates first and second selection signals for outputting any one of music data, a center output, and a lowest output to a P output and an N output based on a power ON/OFF signal and a start/stop signal, and also generates a third selection signal for determining whether a signal having the same phase as that of the P output is output to the N output or a signal obtained by inverting the P output is output to the N output. A data selection circuit determines data to be output to the P output and the N output based on the first and second selection signals. An output data register circuit converts parallel data determined by the data selection circuit into serial data to output the serial data into the P output. An output selection circuit determines the N output based on the third selection signal.

Pulse width modulation digital amplifier

A pulse width modulation (PWM) converting circuit includes a pulse generator for generating two pulse signals for each bit of a basic clock pulse train, in response to the value of digital input data, and a differential amplifier for outputting a differential amplification component between the two pulse signals as a PWM signal. The pulse generator varies pulse width of a first of the two pulse signals, on a bit-by-bit basis, of the basic clock pulse train, in response to the value of the digital input data, and holds a level of a second of the two pulse signals throughout all of the bits of the basic clock pulse train, within the period of the pulse of the PWM signal.

PWM converting circuit, D/A converter and PWM converting method with improved resolution

A coding device using compression and expansion of digital data. Maximum values and minimum values of data are determined in each of predetermined N samples, and coding is performed by an orthogonal conversion computation unit which performs subtractions using the maximum value and the minimum value.

Coding device

A D/A converter with an overflow detector for resetting a delaying unit when a digital signal overflows a specified bitprovided in a noise shaping circuit thereof.

D/A converter having mechanism for preventing analog signal distortion

Growing community of inventors

Tokyo, Japan

Hiroyuki Harada