Covalent Materials Corporation

Toshiba Ceramics Co., Ltd.

Hiroyuki Goto

Hiroyuki Saito

Hiroshi Shirai

Hideo Uemoto

Haruo Murayama

Masahiko Ichishima

Tomoki Sugino

Susumu Kimijima

Makiko Fujinami

A micro channel structure bodyin which a micro channelhaving a predetermined cross-sectional shape is formed in a laminate where substrates, andhaving formed thereon electrodes, andmade of a thin film are laminated sequentially. The above-mentioned micro channelis formed in a perpendicular direction &#x3b2; perpendicular to a lamination direction &#x3b1; of the above-mentioned laminate. Inner surfacesandof the above-mentioned micro channelhave an acute angle &#x3b8; with respect to the lamination direction &#x3b1; of the above-mentioned laminate. The above-mentioned plurality of electrodes, andare formed and exposed in the lamination direction &#x3b1; of the inner surfacesandof the above-mentioned micro channel

Micro channel structure body and method of manufacturing micro channel structure body

Provided are a ceramic-fine-particle producing process making it possible to produce, with ease, ceramic fine particles which have a spherical shape close to a complete round and an excellent mono-dispersibility, and are made only of a solid component of a simple ceramic material without making a fine channel structure complicated, and an apparatus used therein for producing ceramic fine particles. The process includes the step (S) of feeding a dispersion phase made of an aqueous liquid containing a gelling agent to act upon cooling and a ceramic material into a continuous phase made of an oily liquid containing a surfactant, thereby producing fine droplets; the step (S) of collecting and cooling the produced fine droplets; the step (S) of washing the cooled fine droplets; the step (S) of drying the washed fine droplets; and the step (S) of firing the dried fine droplets.

Process for producing ceramic fine particles, and ceramic fine particle producing apparatus used therein

The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor wafer and a scattered beam from a defect present in a subsurface layer of the wafer is detected by an image pick-up device. The temperature of the wafer is changed to at least two temperatures of T and T or to any one of plural temperatures by means of a heater and the intensity of a scattered beam is measured. It is taken into account that the light absorbance of silicon and the penetration depth of light in silicon vary depending on temperature, to determine the depth and a relative dimensional factor of an internal defect which causes scattering of light, as well as the number of such crystal defects.

Wafer defect measuring method and apparatus

Growing community of inventors

Hadano, Japan

Hiroyuki Goto