Kabushiki Kaisha Toshiba

Kioxia Corporation

Tohoku University

Hiroyuki Fukui

Ikuo Uematsu

Kenya Uchida

Naoya Hayamizu

Eunsang Kwon

Takeaki Iwamoto

Yukihiro Shibata

Shuichi Samata

Masaaki Kato

Moriya Miyashita

Masanori Numano

Katsuya Eguchi

Atsuko Kubota

Hachiro Hiratsuka

According to one embodiment, a determination method is provided. The determination method determines progress of a treatment of a side-product produced in a process of reacting a substance containing a halogen and silicon or reacting a substance containing silicon and a substance containing a halogen. The treatment of the side-product includes bringing the side-product into contact with a treatment fluid containing water to obtain a first solid matter. The determination method includes determining the progress of the treatment of the side-product based on a signal according to a chemical analysis of at least one of an Si-α bond (α is at least one selected from the group consisting of F, Cl, Br, and I) and an Si—H bond, of the first solid matter.

Determination method and treatment method

According to an embodiment, a process apparatus performs processing on a byproduct generated in a reaction of a raw material including silicon and a halogen element or in a reaction between a raw material including silicon and a raw material including a halogen element. The apparatus includes a process liquid tank, a processing tank, a supplier and an exhauster. A process target member including the byproduct is introduced into the processing tank. The supplier supplies the process liquid from the process liquid tank to the processing tank and performs processing on the byproduct with the supplied process liquid. The exhauster exhausts a gas generated by reaction between the process liquid and the byproduct from the processing tank.

Process apparatus and process method

According to one embodiment, a silicon-containing product forming apparatus includes a reaction chamber, an emission path, a process liquid tank, a supplier, and a flow path switcher. The emission path emits an emission material from the reaction chamber. The supplier includes a supply line configured to supply a process liquid to the emission path from the process liquid tank, and a byproduct generated by reaction is treated in the emission path by the supplied process liquid. The flow path switcher switches the communication state of the emission path with each of the reaction chamber and the supply line of the supplier.

Silicon-containing product forming apparatus

A cleaning system includes: a sulfuric acid electrolytic portion configured to electrolyze a sulfuric acid solution to generate an oxidizing substance in an anode chamber, a concentrated sulfuric acid supply portion configured to supply a concentrated sulfuric acid solution to the anode chamber, and a cleaning treatment portion configured to carry out cleaning treatment of an object to be cleaned using an oxidizing solution comprising the oxidizing substance. The sulfuric acid electrolytic portion has an anode, a cathode, a diaphragm which is provided between the anode and the cathode, the anode chamber which is demarcated between the anode and the diaphragm and a cathode chamber which is demarcated between the cathode and the diaphragm.

Cleaning system and cleaning method

An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling point of 150&#xb0; C. or more; and a second liquid capable of producing protons (H). Alternatively, an etching liquid includes: water; phosphoric acid; and sulfuric acid, the phosphoric acid and the sulfuric acid having a volume ratio of 300:32 to 150:300.

Etching liquid, etching method, and method of manufacturing electronic component

There are provided a method of inspecting and evaluating semiconductor substrates, good quality semiconductor substrates, a method of manufacturing good quality semiconductor substrates, and a method of manufacturing semiconductor devices using good quality semiconductor substrates. A semiconductor substrate is processed with aqueous basic solution. In this process, the substrate is dipped in the aqueous solution or exposed to a vapor of the aqueous solution. With this process, the surface of the substrate is selectively etched. The substrate surface after the etching process is radiated with a laser beam to measure a light scattered point density. The quality of the substrate can be judged in accordance with the measured density. A thermal treatment may be carried out before or after processing the substrate with the aqueous basic solution. The thermal treatment considerably changes the fine defect density on the surface of the substrate. In accordance with such a change, the quality of the substrate may be judged. If a substrate judged as having a good quality is used, a semiconductor device having a good quality substrate can be obtained.

Growing community of inventors

Kanagawa-ken, Japan

Hiroyuki Fukui