Kabushiki Kaisha Toshiba

International Superconductivity Technology Center

Sumitomo Electric Industries, Limited

Hiroyuki Fuke

Hiroyuki Kayano

Yoshiaki Terashima

Mutsuki Yamazaki

Fumihiko Aiga

Takeshi Araki

Tatsunori Hashimoto

Mariko Hayashi

Yoshiaki Fukuzumi

Hideaki Aochi

Koji Asakawa

Satoshi Mikoshiba

Reika Ichihara

Hideyuki Nishizawa

Shigeki Hattori

Tsukasa Tada

Masaya Terai

Youichi Enomoto

Nao Kobayashi

Riichi Katoh

Shoji Tanaka

Yuh Shiohara

Ko Yamada

Hisashi Yoshino

Masaya Konishi

Riichi Kato

Kazuo Saitoh

An oxide superconductor according to an embodiment includes an oxide superconducting layer includes a single crystal having a continuous perovskite structure containing at least one rare earth element selected from the group consisting of yttrium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, barium, and copper, containing praseodymium in a part of the site of the rare earth element in the perovskite structure, and having a molar ratio of praseodymium of 0.00000001 or more and 0.2 or less with respect to the sum of the at least one rare earth element and praseodymium; fluorine in an amount of 2.0&#xd7;10atoms/cc or more and 5.0&#xd7;10atoms/cc or less; and carbon in an amount of 1.0&#xd7;10atoms/cc or more and 5.0&#xd7;10atoms/cc or less.

Oxide superconductor and method for manufacturing the same

An oxide superconductor includes: REBaCuO(RE being one element selected from a 'RE element group' of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three types of metallic elements (M, M, and M), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(M)&#x2264;20 mol % and R(M)&#x2265;60 mol % and R(M)&#x2264;20 mol %, R(M) being an average metallic element ratio of Min M+M+M, SD(Ms)&#x3e;0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M) and R(M), SD(Ms) being a standard deviation/average value of a concentration of Ms.

According to an embodiment, a superconductor includes a base member, and a superconducting layer provided on the base member. The superconducting layer has a first surface on the base member side, and a second surface on the side opposite to the first surface. The lattice constant of the base member substantially matches the lattice constant of the superconducting layer. The superconducting layer includes REAREBBaCuO. The x is not less than 0.01 and not more than 0.40. The z is not less than 0.02 and not more than 0.20. The REA includes at least one of Y, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu. The REB includes at least one of Nd or Sm. The superconducting layer includes a first surface-side region including a portion of the first surface. The first surface-side region includes a first region having an orientation property, and a second region.

Superconductor and method for manufacturing same

An oxide superconductor according to an embodiment includes an oxide superconducting layer includes a single crystal having a continuous perovskite structure containing at least one rare earth element selected from the group consisting of yttrium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, barium, and copper, containing praseodymium is a part of the site of the rare earth element in the perovskite structure, and having a molar ratio of praseodymium of 0.00000001 or more and 0.2 or less with respect to the sum of the at least one rare earth element and praseodymium; fluorine in an amount of 2.0&#xd7;10atoms/cc or more and 5.0&#xd7;10atoms/cc or less; and carbon in an amount of 1.0&#xd7;10atoms/cc or more and 5.0&#xd7;10atoms/cc or less.

An oxide superconductor includes: REBaCuO(RE being one element selected from a 'RE element group' of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three, types of metallic elements (M1, M2, and M3), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(1)&#x2264;20 mol % and R(M2)&#x2265;60 mol % and R(M3)&#x2264;20 mol %, R(M1) being an average metallic element ratio of M1 in M1+M2+M3, SD(Ms)&#x3e;0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M1) and R(M3), SD(Ms) being a standard deviation/average value of a concentration of Ms.

According to an embodiment, a superconductor includes a base member, and a superconducting layer provided on the base member. The superconducting Layer has a first surface on the base member side, and a second surface on the side opposite to the first surface. The lattice constant of the base member substantially matches the lattice constant of the superconducting layer. The superconducting layer includes REAREBBaCuO. The x is not less than 0.01 and not more than 0.40. The z is not less than 0.02 and not more than 0.20. The REA includes at least one of Y, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu. The REB includes at least one of Nd or Sm. The superconducting layer includes a first surface-side region including a portion of the first surface. The first surface-side region includes a first region having an orientation property, and a second region.

According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

Nonvolatile semiconductor memory device and method for manufacturing same

According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0&#xd7;10-5.0&#xd7;10atoms/cc and carbon at 1.0&#xd7;10-5.0&#xd7;10atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (&#x394;&#x3c6;) of 10 degrees or less, and contains a LnBaCuOsuperconductor material (Ln being yttrium or a lanthanoid except cerium, praseodymium, promethium, and lutetium). The oxide layer is provided in contact with a lower surface of the superconductor layer and oriented with an in-plane orientation degree (&#x394;&#x3c6;) of 10 degrees or less with respect to one crystal axis of the superconductor layer. Area of a portion of the lower surface of the superconductor layer in contact with the oxide layer is 0.3 or less of area of a region directly below the superconductor layer.

Oxide superconductor, oriented oxide thin film, and method for manufacturing oxide superconductor

A superconductor filter comprises a plurality of resonance elements arranged between input-output lines formed on a substrate. Metal conductor sections serving to inhibit the spatial coupling between the adjacent resonance elements are arranged between prescribed resonance elements, and a prescribed resonance element is coupled with another resonance element by a coupling transmission line. It follows that each resonance element is coupled with another resonance element by the direct coupling via the coupling transmission line or by the spatial coupling via the space.

Superconductor filter

A band pass filter which is configured by a microstrip line, or a strip line is provided. The band pass filter has a first half wavelength resonator which resonates at a center frequency of a pass band, a second half wavelength resonator which resonates at the center frequency of the pass band, and a transmission line through which the first half wavelength resonator is wire-coupled to the second half wavelength resonator. A strong coupling can be stably realized without causing deviation of the resonance frequencies of resonators.

Band pass filter having resonators connected by off-set wire couplings

A filter circuit has a complex block and exciting portions. The complex block has: a first block end resonator; a first resonator that is coupled to the first block end resonator; a second resonator that is coupled to the first resonator; a third resonator that is coupled to the second resonator; a fourth resonator that is coupled to the third resonator; and a second block end resonator that is coupled to the fourth resonator. Couplings between the first block end resonator and the second block end resonator, between the first resonator and the fourth resonator, and between the second resonator and the third resonator are in phase. The complex block and the exciting portions are single-path-coupled.

Filter circuit

A high-frequency device comprises a dielectric substrate, a filter element which has a plurality of resonating elements made of a first superconductor film on the dielectric substrate, a dielectric plate which faces the dielectric substrate substantially in parallel with the substrate and covers the plurality of resonating elements, and a spacing adjusting member configured to control the spacing between the dielectric plate and the dielectric substrate. The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic.

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Kawasaki, Japan

Hiroyuki Fuke