Horiba, Ltd.

Horiba Stec, Co., Ltd.

Tokyo Electron Limited

Hiroyuki Ebi

Tsuneyuki Okabe

Shuji Moriya

Hitoshi Kitagawa

Kimio Miyatake

Tetsuo Shimizu

Kozo Ishida

Kazutaka Okamoto

Hiroshi Takakura

Noboru Hayakawa

Takeshi Shimada

Shohei Yamano

A flow rate sensor is disclosed, comprising a flow rate calculation part that calculates a flow rate of a fluid based on an expression using X/Xthat satisfies an expression at least in a certain range of the flow rate when an output of a constant temperature control circuit corresponding to an upstream resistor is defined as V, an output of a constant temperature control circuit corresponding to a downstream resistor is defined as V, and the flow rate is defined as and the flow rate calculation part corrects the zero point output as being an output when the flow rate is zero by using a zero offset function (OFS) defined as a function of V+VX/X.

Flow rate sensor

A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.

Thermal type mass flow meter, and thermal type mass flow control device

Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage () for supplying gas into a heat treatment unit (), an MFC () for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves () provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.

Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system

In a CCD sensor in which electric charges derived from a plurality of detecting elementsare outputted from a signal output portion, two diffusion portionsA andB are provided in a parallel manner to each other in the signal output portion, and electric charges outputted from a designated detecting elementare accumulated into one diffusion portionsA so as to output the accumulated electric charges. Even in such a case that signal levels derived from detecting elements are low, such a CCD sensor capable of performing a high-precision measuring operation is provided, while a dynamic range of the CCD sensor is widened.

CCD sensor incorporating parallel diffusion regions within the output

A surveillance system utilizing a plurality of communication devices that are operative with portable telephones to permit an easily reconfigurable remote surveillance area. The portable telephones can have audio and imaging transmitting functions and at least one has an audio and imaging receiving function. An image sensor can sense images within a predetermined area and is operatively connected to a portable telephone for providing an output signal upon detection of a predetermined amount of change in the image area. An auto-dialing section is connected to a first telephone for calling a second remote telephone automatically based on the output signal. Infrared detecting sensors can also image within the surveillance area and be utilized to activate the auto-dialing function. The portable telephones can further include an image sensor for providing an image of the surveillance area.

Communication device and auxiliary device for communication

An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. A pair of filters is provided, one of the filters transmitting only radiation in the range and the other of the filters transmitting only radiation in a range near to the firstmentioned range. A disc with the filters thereon rotates in front of the window for passing the filters across the path of radiation escaping from the container. An infrared radiation detector is positioned for receiving the radiation passed by the respective filters and emitting a pulsed signal, which is fed to a comparator for determining the difference between or the ratio of the respective pulses of the signal as an indication of the concentration of the ingredient the concentration of which is to be determined in the sample gas.

Infrared radiation gas analyzer

An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. An optical chopper is positioned outside the container for interrupting the radiation escaping from the container. A filter is positioned in the path of the radiation escaping from the container and transmits only radiation in the range. An infrared radiation detector is positioned for receiving the radiation passed by the filter and emitting a signal representative of the radiation received by the detector and which is representative of the concentration of the ingredient the concentration of which is to be determined in the sample gas.

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Kyoto, Japan

Hiroyuki Ebi