Dainippon Screen Mfg. Co., Ltd.

Screen Holdings Co., Ltd.

Mitsubishi Gas Chemical Company, Inc.

Hiroyuki Araki

Masahiro Miyagi

Masanobu Sato

Kentaro Tokuri

Masanori Suzuki

Nobuo Kawase

Tomokatsu Sato

Masahiro Kimura

Kenji Yamada

Kenichiro Arai

Koji Ando

Hisao Nishizawa

Tomohiro Takahashi

Tomoyuki Azuma

Hiroshi Masuda

Masaaki Yabuta

Yoshio Nomura

A processing liquid supplying apparatus is arranged to discharge a processing liquid from a discharge port to supply the processing liquid to a processing object, and the processing liquid supplying apparatus includes a first piping, through the interior of which the processing liquid can flow, the interior of the first piping being in communication with the discharge port, and an X-ray irradiating means irradiating X-rays onto the processing liquid present inside the first piping. The first piping has an opening in its pipe wall and the opening is closed by a window member formed using a material that can transmit the X-rays, and the X-ray irradiating means irradiates the X-rays onto the processing liquid present inside the first piping via the window member.

Processing fluid supply device, substrate processing device, processing fluid supply method, substrate processing method, processing fluid processing device, and processing fluid processing method

A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water may be substantially grounded. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Substrate processing apparatus

A substrate treating apparatus includes a circulating line having a treating tank for storing a phosphoric acid aqueous solution, a circulating pump for feeding the phosphoric acid aqueous solution, a heater for circulation for heating the phosphoric acid aqueous solution, a filter for filtering the phosphoric acid aqueous solution, the circulating line causing the phosphoric acid aqueous solution discharged from the treating tank to flow in order of the circulating pump, the heater for circulation and the filter, and returning the phosphoric acid aqueous solution from the filter to the treating tank. The apparatus also includes a branch pipe branching from the circulating line between the heater for circulation and the filter for extracting the phosphoric acid aqueous solution from the circulating line, and a concentration measuring station connected to the branch pipe for measuring silicon concentration in the phosphoric acid aqueous solution by potentiometry.

Substrate treating method for a substrate treating apparatus that carries out etching treatment of substrates

A substrate processing method in a substrate processing apparatus that has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water maybe substantially grounded. With the disclosed method, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Substrate processing method

A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material or semiconductor material. Hydrophilic treatment may be performed on an outer annular surface of the cup part and water may be held on the outer annular surface of the cup part while processing the substrate. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

A substrate processing apparatus includes a substrate holding unit, an injection unit that injects droplets of a processing liquid from a plurality of injection ports respectively toward a plurality of collision positions on the substrate, and a liquid film forming unit. The liquid film forming unit discharges a protective liquid from a plurality of discharge ports toward a plurality of liquid contact positions that respectively cover different collision positions. The plurality of injection ports and the plurality of discharge ports may be formed in a nozzle. A nozzle moving unit may be provided, to move the nozzle along the substrate.

Substrate processing apparatus, and nozzle

A substrate processing apparatus has a cup part for receiving processing liquid which is applied from a processing liquid applying part and is splashed from a substrate, and the cup part is formed of electrical insulation material. Hydrophilic treatment is performed on an outer annular surface of the cup part and water is held on the outer annular surface of the cup part while processing the substrate. With this structure, charged potential of the cup part generated in splashing of pure water can be suppressed by the water held on the outer annular surface, without greatly increasing the manufacturing cost of the substrate processing apparatus by forming the cup part with special conductive material. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

A substrate processing apparatus which holds and rotates a substrate substantially horizontally; having a control unit which controls a rinsing liquid supply mechanism for supplying a rinsing liquid onto the substrate; a gas knife mechanism that sprays gas onto the substrate to form a gas spraying zone and scans the entire substrate without rotating the substrate; a rinsing liquid mechanism for supplying a rinsing liquid onto the substrate at its area downstream from the gas spraying zone; and a drying unit for drying the substrate by rotating the substrate.

Substrate treating apparatus

A substrate processing method comprising: holding a substrate substantially horizontally by a rotatable substrate holding mechanism; supplying a rinsing liquid onto the top of the substrate held by the substrate holding mechanism at the substrate holding step; after the rinsing liquid supply step, spraying a gas onto the top of the substrate held by the substrate holding mechanism, by a gas knife mechanism, to form a gas spraying zone on the substrate top, and unidirectionally scanning the substrate top in its entirety by this gas spraying zone, without rotating the substrate; replenishing the rinsing liquid by supplying, in parallel to the gas knife spraying step, a rinsing liquid onto the substrate top at its area downstream in the gas-spraying-zone scanning direction rather than the gas spraying zone formed by the gas knife mechanism; and drying the substrate surface after the gas knife spraying step and the rinsing liquid replenishing step.

Substrate treating method

A substrate processing apparatus and a substrate processing method are capable of restraining or preventing the generation of streaky particles on a substrate surface by excellent removal of a rinsing liquid therefrom. The substrate processing apparatus has a substrate inclining mechanism for inclining a substrate held by a substrate holding mechanism. After a rinsing liquid has been supplied onto a substrate to form a liquid mass, the substrate is inclined at a small angle by the substrate inclining mechanism. Then, the liquid mass is downwardly moved without being fragmented and then falls down without leaving minute droplets on the substrate top. Thereafter, the substrate is returned to a horizontal posture and then dried.

Substrate treating apparatus and substrate treating method

A substrate processing apparatus includes a photosensor for detecting the presence/absence of a substrate in each place within a carrier cassette, a pair of processing tanks for performing the same process at the same time, and a supply mechanism for supplying a processing solution to the processing tanks independently. The number of substrates is detected in accordance with the result of the detection of the photosensor. If the number of substrates detected is not greater than an allowable number for one of the processing tanks, the processing solution is supplied to only the one processing tank to perform the process. This reduces the consumption of the processing solution in a batch process.

A deionized water temperature control part cools deionized water which is supplied from a deionized water supply source into a processing bath through a pipe after completely cleaning a substrate in the processing bath for maintaining the deionized water at a constant temperature which is lower than the ordinary temperature. A supply port of an IPA.N supply part provided in a casing of a multi-functional processing part is directed upward, thereby supplying IPA vapor upward with carrier gas of N for forming an atmosphere containing IPA vapor in high concentration above the processing bath. Thus, the substrate cooled to a low temperature is dried in the atmosphere containing the IPA vapor of the ordinary temperature in the upper portion of the processing bath when pulled up from the processing bath. Thus, the amount of the IPA vapor dissolved in the deionized water stored in the processing bath may be small, whereby consumption of the IPA vapor as well as generation of particles can be suppressed.

Substrate drying apparatus and substrate processing apparatus

A control unit controls a lifter to raise at least part of each of a group of substrates above the liquid level of a treating liquid in a treating bath. Thereafter, a valve is opened to drain the treating liquid from the treating bath at a high speed. As a result, a physical force to tilt and adhere an upper portion of the adjacent substrates accompanied by lowering of the liquid level of the treating liquid due to the high speed drainage acts upon a lower portion of the substrates near the lowered liquid level of the treating liquid, thereby reducing the physical force exerted on the substrates. This arrangement, even if a holding interval between the substrates is narrowed at a half of a normal pitch, eliminates a contact of the adjacent substrates and prevents damage of the substrates due to the contact without providing an additional member such as a substrate support guide in the treating bath.

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Kyoto, Japan

Hiroyuki Araki