National Institute of Advanced Industrial Science and Technology

Other

Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Sii Nanotechnology Inc.

Agency of Industrial Science and Technology Ministry of International

Tokin Corporation

Hiroyuki Akinaga

Hisashi Shima

Yukio Tamai

Masaharu Oshima

Masaki Mizuguchi

Fumiyoshi Takano

Masatoshi Yasutake

Kazuya Ishihara

Nobuyoshi Awaya

Hiroshi Yokoyama

Yasunari Hosoi

Shigeo Ohnishi

Koichi Onodera

Hidenori Takagi

Yasuhisa Naitoh

Isao Inoue

Masafumi Shirai

Shoji Ishibashi

Shuichiro Yasuda

Yasuyuki Semba

Hiromi Kuramochi

Takashi Manago

Makoto Takahashi

Tomoyuki Tamura

An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.

Information processing device and method of driving information processing device

The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiO(wherein x satisfies the relationship 1.6&#x2266;x&#x3c;2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiO, wherein x satisfies the relationship 1.6&#x2266;x&#x3c;2) on the first electrode; exposing the surface of the titanium oxide (TiO) layer to oxygen atmosphere; and depositing a second electrode containing a transition metal with an electronegativity larger than that of Ti on the surface of the titanium oxide (TiO) layer exposed to the oxygen atmosphere.

Rectifier and process for producing the rectifier

Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.

Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device

A magneto-resistance effect device () includes a semiconductor region () having a surface provided with a plurality of isolated metal micro-particles () of not more than 100 &#x3bc;m disposed at intervals of not more than 1 &#x3bc;m, a semiconductor or half-metal cap layer () for covering the semiconductor region and a plurality of electrodes () disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device () has various excellent characteristics.

Magnetoresistance effect device and magnetism sensor using the same

The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.

Switching elements and production methods thereof

The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device

An objective of the present invention is to provide a switching device that shows two markedly different stable resistance characteristics reversibly and repetitively, and which is applicable to highly integrated nonvolatile memories. The present invention provides a switching device, which comprises a variable resistor element that has, between two electrodes, a metal-oxide thin-film comprising a single central metal element with a compositional variation; which is connected to a control circuit which can apply, between said two electrodes, a voltage or a current selected from among a voltage or a current of the first threshold or higher, a voltage or a current of the second threshold or lower whose absolute value is smaller than the absolute value of said first threshold, and a voltage or a current of the third threshold or lower whose absolute value is smaller than the absolute value of said second threshold; and in which the interelectrode resistance characteristic reversibly changes by a factor of 1,000 to 10,000 in the voltage or current region whose absolute value is equal to or below the third threshold.

Switching device

The present invention provides a probe for a scanning magnetic force microscope having a resolution sufficient to allow observation of a magnetic storage medium with 1200 kFCI or higher recording densities, a method for producing the probe, and a method for forming a ferromagnetic alloy film on a carbon nanotube. In the context of the present invention, the probe for a scanning magnetic force microscope comprises a carbon nanotube whose surface is at least in part coated with a ferromagnetic alloy film consisting of any one of a Co&#x2014;Fe alloy and a Co&#x2014;Ni alloy, wherein the arithmetic mean roughness (Ra 10 &#x3bc;m) of the surface of the ferromagnetic alloy film is controlled to 1.15 nm or less. A method for producing such probes for a scanning magnetic force microscope and a method for forming such a ferromagnetic alloy film on a carbon nanotube, so as to achieve such mean surface roughness by controlling the growth rate of the ferromagnetic alloy film within the range of 1.0 to 2.5 nm/min, is also disclosed.

Probe for a scanning magnetic force microscope, method for producing the same, and method for forming ferromagnetic alloy film on carbon nanotubes

The object of the present invention is to provide a method and device thereof that captures microscopic magnetic signals such as those developed by electrical current flowing inside a circuit that is miniaturized to less than sub-micron order, and to evaluate the circuit. The scanning probe microscope for ultra-sensitive electro-magnetic field detection of the present invention has a constitution that uses a giant magnetostrictive material that demonstrates a large magnetostriction characteristic in a weak magnetic field in at least one portion of the probe of a cantilever of a scanning probe microscope, and at the same time as capturing the change in the magnetic flux due to a local change in electrical current, or the magnetic flux of a magnetic body, as a signal of displacement of said giant magnetostrictive material, on the other hand, detects the local shape of a sample surface with the function of the scanning probe microscope, and dissociates and images the magnetic flux information and shape information from the signal of displacement of the giant magnetostrictive material.

Scanning probe microscope for ultra sensitive electro-magnetic field detection and probe thereof

A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300&deg; C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Magnetoresistance effect film and method of forming same

A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

Spin electronic material and fabrication method thereof

A semiconductor magneto-optical material includes a semiconductor dispersed with fine magnetic material particles and is characterized by exibiting magneto-optical optical effect at ordinary room temperature.

Semiconductor magneto-optical material

A semiconductor magneto-optical material includes a semiconductor dispersed with fine magnetic material particles and is characterized by exhibiting magneto-optical effect at ordinary room temperature.

Growing community of inventors

Tsukuba, Japan

Hiroyuki Akinaga