Basf Se Corporation

Polyera Corporation

Flexterra, Inc.

Clap Co., Ltd.

Hiroyoshi Noguchi

Ashok Kumar Mishra

Subramanian Vaidyanathan

Florian Doetz

Marcel Kastler

Silke Annika Koehler

Yucui Guan

Florian Dötz

Mi Zhou

Bo Zhu

Thomas Weitz

Chongjun Jiao

Mai Minh-Tien

Johan Sebastian Basuki

Jiao Chongjun

Ang Sweemeng

Doi Iori

Silke Köhler

Silke Koehler

Ashoki Kumar Mishra

Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Semiconductor materials prepared from dithienylvinylene copolymers

The present invention provides a polymer comprising a unit of formula, wherein

Semiconducting materials based on naphthalenediimide-vinylene-oligothiophene-vinylene polymers

The present invention provides semiconducting compounds, oligomers and polymers of formula wherein  The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Semiconductor materials prepared from bridged bithiazole copolymers

Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed. 

Phenacene compounds for organic electronics

Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C&#x2014;R, wherein R is H or a C-Calkyl group, R, at each occurrence, is independently selected from H, a Calkyl group, a Calkenyl group, a Chaloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the Calkyl group, the Calkenyl group, and the Chaloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, &#x2014;NO, OH, NH, &#x2014;NH(Calkyl), N(Calkyl), &#x2014;S(O)OH, &#x2014;CHO, &#x2014;C(O)&#x2014;Calkyl, &#x2014;C(O)OH, &#x2014;C(O)&#x2014;OCalkyl, &#x2014;C(O)NH, &#x2014;C(O)NH&#x2014;Calkyl, &#x2014;C(O)N(Calkyl), &#x2014;OCalkyl, &#x2014;SiH, &#x2014;SiH(Calkyl), &#x2014;SiH(Calkyl), and &#x2014;Si(Calkyl); and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, &#x2014;CN, &#x2014;NO, OH, &#x2550;C(CN), &#x2014;NH, &#x2014;NH(Calkyl), N(Calkyl), &#x2014;S(O)OH, &#x2014;CHO, &#x2014;C(O)OH, &#x2014;C(O)&#x2014;Calkyl, &#x2014;C(O)&#x2014;OCalkyl, &#x2014;C(O)NH, &#x2014;C(O)NH&#x2014;Calkyl, &#x2014;C(O)N(C, &#x2014;SiH, &#x2014;SiH(Calkyl), &#x2014;SiH(Calkyl), &#x2014;Si(Calkyl), &#x2014;O&#x2014;Calkyl, &#x2014;O&#x2014;Calkenyl, &#x2014;O&#x2014;Chaloalkyl, Calkyl, Calkenyl, Chaloalkyl, Carylalkyl, Caryloxy and Carylcarbonyl. Mis a repeating unit comprising one or more cyclic moieties; and n is an integer between 2 and 5,000. 

Dithienophthalimide semiconductor polymers

A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N&#x2014;R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Rgroups; Y, at each occurrence, is independently a divalent Calkyl group, a divalent Chaloalkyl group, or a covalent bond; c is from 1 to 6. 

Fused bithiophene-vinylene polymers

The present invention provides a polymer comprising a unit of formula and an electronic device comprising the polymer as semiconducting material.

Semiconductor materials based on diketopiperidinopiperidine copolymers

Semiconductor materials based on thienothiophene-2,5-dione oligomers and polymers

The present invention provides a polymer comprising a unit of formula The present invention also provides an electronic device comprising the polymer as semiconducting material.

Growing community of inventors

Singapore, Singapore

Hiroyoshi Noguchi