Oki Electric Industry Co., Ltd.

Other

Tokyo Ohka Kogyo Co., Ltd.

Hiroyo Kato

Akira Hashimoto

Yoshihiro Sawada

Juro Mita

Ichiro Koiwa

Yukihisa Okada

Tetsuya Osaka

Yoshinori Maeno

Yoichi Nishioka

Yutaka Okabe

Takao Kanehara

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film ( ), a ferroelectric capacitor ( ) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

COATING SOLUTIONS FOR USE IN FORMING BISMUTH-BASED FERROELECTRIC THIN FILMS, AND FERROELECTRIC THIN FILMS, FERROELECTRIC CAPACITORS AND FERROELECTRIC MEMORIES FORMED WITH SAID COATING SOLUTIONS, AS WELL AS PROCESSES FOR PRODUCTION THEREOF

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi. Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and contains composite metal alkoxides formed by any two or more of said metal alkoxides; and a ferroelectric thin film, a ferroelectric capacitor and a ferroelectric memory formed by the use of such coating solution, and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (,), a ferroelectric capacitor (,) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

Coating solutions for use in forming bismuth-based ferroelectric thin

An image recording device which permits repeated thermoreversible recording and erasure of an image, which is useful for creating an image for storage, display or printing of the image or other information. The recording device has a display medium, a recording means to form an image on the display medium, and an erasure means to erase the image formed on the medium. The display medium of the image recording device may have a support member with a recording layer provided on the support member. The display medium has a transparency which is dependent upon its thermal history, and consists essentially of a matrix material of a copolymer of styrene and butadiene, and a saturated carboxylic acid of 10 to 24 carbon atoms. The weight ratio of the matrix material to saturated carboxylic acid in the display medium is from 1:1 to 20:1.

Thermoreversible recording medium, apparatus utilizing the same and

An image forming apparatus which permits reversible recording and erasure by a heating means, and permits storage, display, printing or reproduction of an image or other information. The present apparatus thermoreversibly records an image on a matrix material of a copolymer of styrene and butadiene and a low molecular weight, saturated carboxylic acid, preferably containing from 10 to 24 carbon atoms, and where the weight ratio of the matrix material to carboxylic acid is from 1:1 to 20:1.

A thermoreversible recording medium which permits reversible recording and erasure to be repeated by use of a heating means, such as a thermal head or a laser, and is used for example, for storage, display or printing of image or other information, comprises a matrix material and an organic substance of low molecular weight. The matrix material essentially consists of a copolymer of styrene and butadiene, and the organic substance is a saturated carboxylic acid. The saturated carboxylic acid may preferably be capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, arachic acid, behenic acid or lignoceric acid. These compounds are saturated carboxylic acids with 10-24 carbon atoms. The weight ratio between the matrix and the organic substance is set within 1:1 to 20:1.

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Tokyo, Japan

Hiroyo Kato