Fujitsu Corporation

Technical Research & Development Institute Ministry of Defense of Japan

Hiroyasu Yamashita

Hironori Nishino

Junichi Kon

Kenichi Kawaguchi

Yoshiaki Nakata

Nami Yasuoka

Yusuke Matsukura

Ryo Suzuki

Yasuhito Uchiyama

Mitsuhiro Nagashima

Michiya Kibe

Minoru Doshida

A photodetector includes: a photoelectric conversion layer including a first principal surface from which light enters and a second principal surface on the opposite side from the first principal surface and configured to perform photoelectric conversion on the light; a first diffraction grating formed on a side of the second principal surface and including a configuration where first surfaces which extend in a stripe state in a first direction and second surfaces which extend in a stripe state in the first direction and have a height difference with respect to the first surfaces are alternately arranged; metal wires provided at intervals over the first surfaces and the second surfaces and which extend in the first direction or a second direction perpendicular to the first direction; and a second diffraction grating formed over the first diffraction grating and including grooves which are formed at intervals and extend in the second direction.

Photodetector and imaging device

A photodetector includes a quantum dot group including a first quantum dot of a reference size and a second quantum dot of a size other than the reference size, a first resonant tunneling structure disposed on a first side of the quantum dot group and including a barrier layer, a well layer, and a barrier layer, and a second resonant tunneling structure disposed on a second side of the quantum dot group and including a barrier layer, a well layer, and a barrier layer, wherein a first resonance level of the first resonant tunneling structure and a ground level of the first quantum dot have a relationship that causes tunneling, and a second resonance level of the second resonant tunneling structure and an excited level of the first quantum dot have a relationship that causes tunneling.

Photodetector, method for manufacturing the same, and imaging apparatus

A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.

A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.

Semiconductor photodetector element and method

An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer, and an upper electrode layerformed over the infrared absorption layer. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

Growing community of inventors

Isehara, Japan

Hiroyasu Yamashita