Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi High-tech Corporation

Hitachi High-tech Science Corporation

Hiroyasu Shichi

Satoshi Tomimatsu

Muneyuki Fukuda

Kaoru Umemura

Shinichi Matsubara

Hidemi Koike

Hideo Kashima

Mitsuo Tokuda

Yasuhiro Mitsui

Yoshimi Kawanami

Tohru Ishitani

Noriaki Arai

Norihide Saho

Tomihiro Hashizume

Yoichi Ose

Hisayuki Takasu

Kengo Asai

Toru Iwaya

Noriyuki Kaneoka

Koji Ishiguro

Eiichi Seya

Keiji Watanabe

Takashi Ohshima

Hifumi Tamura

Hiroyuki Muto

Hideo Todokoro

Tokuo Kure

Katsuhiro Kuroda

Daisuke Ryuzaki

Ken Ninomiya

Masaki Hasegawa

Toshiyuki Mine

Yoshinori Nakayama

Takashi Nishida

Masahiro Yamaoka

Eiichi Izumi

Eisuke Mitani

Miyuki Takahashi

Yoshimi Sudo

Hiroyuki Tanaka

Aritoshi Sugimoto

Naoshi Itabashi

Masakazu Sugaya

Junichi Katane

Hideo Morishita

Masatoshi Morishita

Kozo Mochiji

Hiroyasu Kaga

Teruo Kohashi

Misuzu Sagawa

Shigehiko Yamamoto

Hiroshi Iwamoto

Isamu Sekihara

Keiichi Kanehori

Setsuo Nomura

Hironori Moritani

Tatsuro Ide

Yoshinori Ikebe

Seiji Yamamoto

Satoshi Osabe

Toru Ishitani

Osamu Watanabe

Atsushi Kobaru

An activation mechanism is provided in an activation region of an electron gun, and includes a light source deviceconfigured to irradiate a photocathode with excitation light, a heat generating element, an oxygen generation unit configured to generate oxygen by heating the heat generating element, and an emission current meter configured to monitor an emission current generated by electron emission when the photocathodeis irradiated with the excitation light from the light source device. In a surface activation process, the photocathode is irradiated with the excitation light from the light source device, an emission current amount of the photocathode is monitored by the emission current meter, the heat generating element is heated to generate oxygen by the oxygen generation unit, and the heating of the heat generating element is stopped when the emission current amount of the photocathode satisfies a predetermined stop criterion.

Electron beam application device

To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

Ion milling apparatus

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/mto 191 kJ/m.

Ion milling device, ion source, and ion milling method

An Hion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The Hion can be obtained by use of a probe current within a voltage rangearound a second peakoccurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

Field ionization source, ion beam apparatus, and beam irradiation method

An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

Ion beam device and cleaning method for gas field ion source

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including Hions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H.

Ion beam apparatus

In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

Ion beam device

A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

Microstructure manufacturing method and ION beam apparatus

The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

Microstructure manufacturing method and microstructure manufacturing apparatus

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gunthat includes a permanent magnetand that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shieldfor reducing a leakage magnetic field from the permanent magnetto the electron microscope column is provided.

Ion milling system

Since a diffraction phenomenon occurs in the electron beam passing through a differential evacuation hole, an electron beam whose probe diameter is narrowed cannot pass through a hole having an aspect ratio of a predetermined value or more, and accordingly, a degree in vacuum on the electron beam side cannot be improved. By providing a differential evacuation hole with a high aspect ratio in an ion beam device, it becomes possible to obtain an observed image on a sample surface, with the sample being placed under the atmospheric pressure or a pressure similar thereto, in a state where the degree of vacuum on the ion beam side is stabilized. Moreover, by processing the differential evacuation hole by using an ion beam each time it is applied, both a normal image observation with high resolution and an image observation under atmospheric pressure or a pressure similar thereto can be carried out.

Ion beam device and sample observation method

To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 &#x3bc;m to 350 &#x3bc;m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

Ion milling device and ion milling method

Ion milling device, ion source and ion milling method

Growing community of inventors

Tokyo, Japan

Hiroyasu Shichi