Kabushiki Kaisha Toshiba

Hiroyasu Kunimi

Kazuhide Sugiura

An imaging sensor comprises a pixel array having an active imaging portion and a shielded portion. The active imaging portion provides an image signal corresponding to light incident on the pixel array. The shielded portion is shielded from the light incident on the pixel array and therefore provides a dark current signal. The imaging sensor includes a black-level adjustment circuit which adjusts the imaging signal to compensate for variations in the imaging signal black-level values. The black-level adjustment circuit includes an average value calculator to calculate an average signal value for each of a plurality of shielded regions in the shielded portion of the pixel array. A region selector is configured to select average signal values that are within a predetermined range. A black-level adjustment value calculator uses the selected values to calculate an adjustment value for the black-level of the image signal.

Solid-state imaging device

According to one embodiment, a solid-state imaging device includes an effective pixel portion in which effective pixels are provided, a light-shielded pixel portion in which light-shielded pixels are provided, an ADC circuit that performs an AD conversion operation for signal components read from the effective pixel and the light-shielded pixel, on the basis of a result of a comparison with a reference voltage on which a clamping voltage is superimposed, and an AD clamping circuit that calculates a clamping voltage for a target value of a black level read from the light-shielded pixel by extrapolating a relation between the clamping voltage and an AD-converted value of the black level read from the light-shielded pixel at the time when the clamping voltage is applied.

Growing community of inventors

Kanagawa, Japan

Hiroyasu Kunimi