Kabushiki Kaisha Toshiba

Hiroyasu Kubota

Satoshi Inaba

Atsushi Yagishita

Yukihiro Ushiku

Yoshiaki Matsushita

Norihiko Tsuchiya

Yasunori Okayama

Masanori Numano

Minoru Takahashi

Yoshiki Hayashi

Element isolation technique for LSIs having a fine pattern of sub-micron class or finer. A high strained region doped with impurities at a high concentration is formed under, and remote from, a buried insulating material (dielectrics) layer for element isolation. With this buried dielectrics element isolation (BDEI) structure, since the high strained layer exists just under the buried dielectrics layer, crystal defects generated near the buried dielectrics layer due to strain caused by a difference of thermal expansion coefficient between a semiconductor layer and the buried dielectrics layer, are moved toward the high strained layer. Accordingly, the crystal defects do not reach an active region where active elements are formed, so that leakage current in the p-n junction formed in the active layer can be advantageously reduced.

Dielectrically isolated substrate and method for manufacturing the same

A semiconductor device has a semiconductor substrate having a groove, and a semiconductor element formed in a surface region of the semiconductor substrate. A substance having a thermal expansion coefficient different from the semiconductor substrate is embedded in at least a portion of the groove, a crystal defect is generated from the region near the bottom of the groove in the semiconductor substrate, thereby alleviating stress and strain in other regions of the semiconductor substrate, such that such regions cannot generate crystal defects in a region necessary for a circuit operation of the semiconductor element of the surface region.

Semiconductor device and a method for manufacturing the same

A method of growing semiconductor in a vapor phase wherein a silicon oxide film on the surface of a semiconductor substrate wafer is removed, and a silicon layer is grown on the surface of the semiconductor substrate wafer in a vapor phase while rapidly rotating the wafer about a shaft substantially vertical to the wafer.

Method of growing semiconductor in vapor phase

Growing community of inventors

Yachiyo, Japan

Hiroyasu Kubota