Nissin Electric Co., Ltd.

Other

Matsushita Electric Industrial Co., Ltd.

Hiroya Kirimura

Kiyoshi Ogata

Hiroshi Murakami

Takahiro Nakahigashi

Hajime Kuwahara

Satoshi Otani

Takao Tabata

Ichiro Yamashita

Shuhei Tsuchimoto

Hirohisa Tanaka

Eiji Takahashi

Takashi Mikami

Shigeaki Kishida

Naoto Kuratani

Hiroshi Maeda

A method for selectively arranging ferritin in a specified inorganic material part formed on a substrate is provided. The method for arranging ferritin of the present invention is characterized in that ferritin is selectively arranged on a part including titanium or silicon nitride (SiN) in an efficient manner by adding a nonionic surface active agent. Also, selective arrangement capability of ferritin can be markedly improved by modifying the N-terminus of ferritin with a certain peptide.

Method of selective arrangement of ferritin

The invention provides a vacuum processing apparatus, in which a substantial installation area is smaller than that of a conventional vacuum processing apparatus having a plurality of processing chambers of the same size and the same number, and easy maintenance can be achieved. More specifically, the invention provides a vacuum processing apparatus including a plurality of processing chambers, which are provided with processing devices for effecting predetermined processing on a target object, can achieve predetermined internal pressures, and can accommodate the target object for effecting predetermined processing under the predetermined pressures. In the vacuum processing apparatus, the plurality of processing chambers are arranged around a central chamber provided for object transfer and being capable of achieving a predetermined internal pressure, and are connected with the central chamber. The plurality of processing chambers are disposed on two or more vertically different levels, and each of the processing chambers and a processing chamber neighboring thereto in the circumferential direction of the central chamber are disposed on different levels, respectively, and overlap only partially each other.

Vacuum processing apparatus

In a thin film forming method and an apparatus A for implementing the method, a deposition chamber provided with a substrate holder and a radical emitting device continuing to the chamber for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder are used. Deposition gas plasma PL is formed at the vicinity of the substrate S on the holder by supplying a predetermined deposition gas into the chamber . Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device , and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.

Thin film forming method and thin film forming apparatus

A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base gas at the vicinity of the substrate; and crystallizing the silicon in the thin film primarily made of the silicon by emitting excited particles produced from an excited particle material gas to the substrate. At least one of the film material gas and the excited particle material gas contains an impurity gas for forming the silicon semiconductor, and thereby the crystalline silicon base semiconductor thin film is formed on the substrate.

Method of manufacturing a crystalline silicon base semiconductor thin film

A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.

Film forming apparatus for forming a crystalline silicon film

An insulating member is interposed between a film formation chamber container and a plasma chamber container. Both containers are adjacent to and communicated with each other. In the film formation chamber container, a base material holder is provided for holding the base material. Raw material gas is introduced into the plasma chamber container and ionized by high frequency electric discharge, to generate plasma. A high frequency electrode and a high frequency electric power source are provided as a plasma generating unit. There is provided a porous electrode,, the electric potential of which is the same as that of the plasma chamber container,between both chambers,to partition both chambers. A pulse electric powder source for impressing bipolar pulse voltage, in which a positive polarity portion and a negative polarity portion are alternately repeated, is provided between the base material holder and both of the plasma chamber container and the porous electrode,the electric potential of which is the same as that of the plasma chamber container

Thin film forming device for forming silicon thin film having crystallinity

There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

Thin film forming apparatus

In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

Plasma-CVD method and apparatus

In a plasma processing apparatus, wherein a power application electrode for generating plasma and an electrode opposed thereto are disposed in a process chamber which can be exhausted to attain a predetermined vacuum pressure, an electric power is applied to the power application electrode to generate the plasma from a process gas introduced between the electrodes, and intended plasma processing is effected on a substrate mounted on one of the electrodes in the plasma, the apparatus includes a particle discharge duct which surrounds a periphery and a rear side of the power application electrode and has an opening at a position neighboring to the periphery of the power application electrode, and an exhaust device connected to the duct at a position corresponding to a central portion of the rear side of the power application electrode.

Growing community of inventors

Kyoto, Japan

Hiroya Kirimura