Sumitomo Electric Industries, Limited

Hiroya Kimura

Nobuyuki Okuda

Yoshinobu Ueba

Takashi Uemura

Hajime Osaka

Yasuko Okuda

Junji Kido

Takashi Iwasaki

Kenji Ohki

Shigeru Sawada

A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsPgraded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsPbuffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Compound semiconductor wafer and manufacturing method thereof

An organic electroluminescent device having the hole-transport layer in which the hole-transport material is dispersed in the resin binder having a glass transition temperature of not less than 170.degree. C. Since the above organic electroluminescent device has the hole-transport layer exhibiting sufficient durability and higher hole-transport property, it is excellent in luminous efficiency, luminance and stability.

Organic electroluminescent device

Triazole derivatives and organic electroluminescent devices produced

Growing community of inventors

Osaka, Japan

Hiroya Kimura