Mitsubishi Materials Corporation

Toyota Jidosha Kabushiki Kaisha

Hiroya Ishizuka

Yoshirou Kuromitsu

Takeshi Kitahara

Hiroshi Tonomura

Yoshiyuki Nagatomo

Toshiyuki Nagase

Tomoyuki Watanabe

Masakazu Edo

Hideyuki Miyake

Hiromasa Hayashi

Hiroshi Miyata

A manufacturing method of power-module substrate (), the power-module substrate () being obtained by joining a circuit layer () made of copper to one surface of a ceramic substrate () and joining a heat-radiation layer () made of aluminum to the other surface of the ceramic substrate (), including: a circuit layer bonding step in which the circuit layer () is brazed on the ceramic substrate (), a surface treatment step after the circuit layer bonding step in which a thickness of an oxide film on the other surface of the ceramic substrate () is made 3.2 nm or less at least at a peripheral part of an intended bonding area between the ceramic substrate () and the heat-radiation layer (), and a heat-radiation layer bonding step in which the heat-radiation layer () is brazed on the other surface of the ceramic substrate () after the surface treatment step.

Manufacturing method of power-module substrate

In this resistor, a heat sink (Al member) () and the other surface () of a ceramic substrate () are joined together using an Al&#x2014;Si-based brazing filler material. The Al&#x2014;Si-based brazing filler material has a melting point in a range of approximately 600&#xb0; C. to 700&#xb0; C. When the heat sink () and the ceramic substrate () are joined together using the Al&#x2014;Si-based brazing filler material, it is possible to prevent the derogation of the heat resistance and thermal deterioration during joining at the same time.

Resistor and method for manufacturing resistor

This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer () having a Mg-containing compound () (excluding MgO) which contains Mg dispersed in an Al&#x2014;Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer () is within a range from 5 &#x3bc;m to 80 &#x3bc;m.

Power module substrate with heat sink, and method for producing power module substrate with heat sink

Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate

A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55&#x2266;B/A&#x2266;20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.

Power module substrate having heatsink, method for manufacturing the same, power module having heatsink, and power module substrate

A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.

Power element mounting substrate, method of manufacturing the same, power element mounting unit, method of manufacturing the same, and power module

Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.

Growing community of inventors

Koshigaya, Japan

Hiroya Ishizuka