Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Hirotsugu Takahashi

Yasushi Maruyama

Itaru Oshiyama

Takeshi Yanagita

Shunsuke Maruyama

Taichi Natori

Kei Nakagawa

An imaging device of the present disclosure includes an event detection sensor that detects an event, and a control unit that controls the event detection sensor. Then, the control unit switches a resolution of the event detection sensor depending on a traveling state of a mobile body. Furthermore, the imaging system of the present disclosure includes an event detection sensor that detects an event; a control unit that switches a resolution of the event detection sensor depending on a traveling state of a mobile body; and an object recognition unit that performs event recognition on the basis of an event signal output from the event detection sensor.

Imaging device and imaging system

The present technology relates to a sensor and a control method that achieve flexible acquisition of event data. A pixel block of the sensor includes one or more pixels each configured to receive light and perform photoelectric conversion to generate an electrical signal and an event detecting section configured to detect an event that is a change in electrical signal of each of the pixels. The sensor switches connections between a plurality of the pixel blocks. The present technology is applicable to a sensor configured to detect events that are changes in electrical signal of pixels, for example.

Sensor and control method

Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Image pick-up apparatus

This technology relates to an imaging element and an electronic device for reducing any increase in pixel size while lessening any drop in image quality, and to a manufacturing apparatus and a manufacturing method for manufacturing the imaging element and the electronic device. For example, an imaging element includes an element isolation region with an insulator to penetrate a semiconductor layer having transistors formed in a pixel including a photoelectric conversion section. In another example, an electronic device includes an imaging section having an element isolation region with an insulator to penetrate a semiconductor layer having transistors formed in a pixel including a photoelectric conversion section. This technology is applicable not only to the imaging element and the electronic device but also to the manufacturing apparatus and the manufacturing method for manufacturing the imaging element and the electronic device to which the present technology is applied, for example.

Imaging element, electronic device, manufacturing apparatus, and manufacturing method

The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

Solid-state image capturing element, manufacturing method therefor, and electronic device

A solid-state image pickup unit includes: a p-type compound semiconductor layer of a chalcopyrite structure; an electrode formed on the p-type compound semiconductor layer; and an n-type layer formed separately for each pixel, on a surface opposite to a light incident side of the p-type compound semiconductor layer.

Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus

An image pickup element includes: a photoelectric conversion film provided on a semiconductor substrate and including a chalcopyrite-based compound; an insulating film provided on a light incident surface side of the photoelectric conversion film; and a conductive film provided on the insulating film.

Growing community of inventors

Kanagawa, Japan

Hirotsugu Takahashi