Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Hirotoshi Ikeya

Michiya Higashi

Akiko Hatanaka

Akira Yoshizumi

Shuichi Suzuki

Moriyasu Wada

Takayuki Oguni

Kazutaka Matsumoto

There is proposed an electrolytic solution having a low specific resistance, a high sparking voltage and a stable sparking property. This electrolytic solution contains a quaternary ammonium salt of cyanic acid, at least one phosphorus compound selected from an organic phosphorus acid compound, phosphoric acid and salts thereof, water and an organic solvent.

Electrolytic solution for electrolytic capacitor and electrolytic

An epoxy resin composition for sealing, and a resin-sealed type semiconductor device in which this composition is used, of outstanding heat cycle resistance, humidity resistance and laser marking characteristics, can be obtained by using a combination of an organic phosphine compound and a metal complex dye. The epoxy resin composition, characterized in that it consists of epoxy resin, a curing agent having at least 2 phenolic hydroxyl groups per molecule, an organic phosphine compound and a metal complex dye; and to a resin-sealed type semiconductor device characterized in that it is sealed with this composition.

Epoxy resin composition, and resin-sealed semiconductor device in which

A resin encapsulation type semiconductor device having a semiconductor element and a resinous encapsulating material for encapsulating said semiconductor element therein, said resinous encapsulating material comprising a cured product of an epoxy resin composition for encapsulation of semiconductor, comprising:

Resin encapsulation type semiconductor device by use of epoxy resin

There is disclosed a highly reliable resin encapsulation type semiconductor device excellent humidity resistance as well as high temperature electric characteristics. The specific feature consists in the epoxy resin composition employed for encapsulation. This composition comprises a novolac type epoxy resin, a novolac type phenol resin, an organic phosphine compound and an organic phosphorus acid compound. The resin encapsulation type semiconductor device is markedly small in leak current under hot an humid conditions and has a prolonged life due to difficult deterioration through corrosion of electrodes and aluminum wiring, as compared with those of prior art.

Resin encapsulation type semiconductor device

There is presented a highly reliable resin encapsulation type semiconductor device excellent in humidity resistance as well as high temperature electrical characteristics. The specific feature consists in the epoxy resin composition employed for encapsulation. This composition comprises an epoxy resin, a novolac resin as curing agent and an organic tertiary phosphine compound as curing accelerator. The resin encapsulation type semiconductor device is markedly small in leak current under hot and humid conditions and has a prolonged life due to difficult deterioration through corrosion of electrodes and aluminum wiring, as compared with those of prior art.

A semiconductor device sealed in a resin composition, wherein the resin composition contains the prescribed percentages of inorganic fillers having extremely small amounts of impurities, epoxy resin having an epoxy equivalent of 250 or less and a softening point of 120.degree. C. or less, hardening agent, hardening promoter and low melting paraffins.

Growing community of inventors

Yokosuka, Japan

Hirotoshi Ikeya