Semiconductor Energy Laboratory Co., Ltd.

Hiroto Shinoda

Junichi Koezuka

Yoshifumi Tanada

Hiroki Adachi

Shingo Eguchi

Kensuke Yoshizumi

Koji Ono

Naoya Sakamoto

The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.

Light-emitting device and manufacturing method thereof, lighting device, and display device

An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and HO in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.

Ion implantation method and method for manufacturing semiconductor device

Growing community of inventors

Kanagawa, Japan

Hiroto Shinoda