Nec Corporation

Hiroto Ootake

Yoshihiro Hayashi

Munehiro Tada

Masayoshi Tagami

Provided is a wiring of the Damascene structure for preventing the TDDB withstand voltage degradation and for keeping the planarity to prevent the degradation of a focus margin. A trench wiring () is formed in an interlayer insulating film, which is composed of a silicon carbide-nitride film (), a SiOCH film () and a silicon oxide film () [(e)]. The silicon oxide film () is etched at a portion adjacent to the wiring of a polished surface by dry etching or wet etching [(f)]. A silicon carbide-nitride film (SiCN) () is formed as a Cu cap film [(g)]. An interlayer insulating film is further formed thereon to form a conductive plug, a trench wiring and so on.

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Tokyo, Japan

Hiroto Ootake