Kabushiki Kaisha Toshiba

Mitsubishi Chemical Corporation

Hiroto Misawa

Hideki Okumura

Takahiro Kawano

Hitoshi Tsuji

Takayoshi Nogami

Masanobu Tsuchitani

Tatsuya Shiraishi

Masahiko Taniguchi

Akira Ezaki

Noriaki Kurokawa

According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a first insulating layer, and a first insulating region. The second semiconductor region is provided on the first semiconductor region. The first insulating layer is provided around at least a portion of the first semiconductor region and at least a portion of the second semiconductor region. The first insulating layer contacts the second semiconductor region. The first insulating region is provided around at least a portion of the first insulating layer.

Semiconductor device

According to one embodiment, a method for manufacturing a semiconductor device includes: forming a plurality of trenches; forming a gate insulating film; burying a gate electrode; burying an insulating member; projecting the insulating member; forming a base layer; forming a mask film; forming a first semiconductor layer; forming a carrier ejection layer; forming a first electrode; and forming a second electrode. The projecting includes projecting the insulating member from the upper surface of the semiconductor substrate by removing an upper layer portion of the semiconductor substrate. The mask film is formed so as to cover the projected insulating member. The forming the first semiconductor layer includes forming a first semiconductor layer of the first conductivity type in an upper layer portion of the base layer by doping the base layer with impurity, the upper layer portion having a lower surface below an upper end of the gate electrode.

Semiconductor device and method for manufacturing same

A type semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a plurality of gate electrodes which are formed in gate trenches via gate insulating films, the gate trenches being formed through the second semiconductor layer and the third semiconductor layer; a plurality of impurity regions of the second conductivity type which are formed at regions below bottoms of contact trenches, the contact trenches being formed at the third semiconductor layer in a thickness direction thereof between corresponding ones of the gate trenches and longitudinal cross sections of the contact trenches being shaped in ellipse, respectively; first electrodes which are formed so as to embed the contact trenches and contacted with the impurity regions, respectively; and a second electrode formed on a rear surface of the semiconductor substrate.

Semiconductor device and method for manufacturing the same

In a method of manufacturing a semiconductor apparatus, a resist is coated on a semiconductor substrate and baked. The resist is exposed with an electron beam, and an invertedly tapered opening is formed. Recess etching is performed on the semiconductor substrate through the opening. An electrode is formed at a location determined by the recess etching.

Method of manufacturing semiconductor device

Method of manufacturing HEMT device using novolak-based positive-type

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Nomi Ishikawa, Japan

Hiroto Misawa