Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Hiroto Matsubayashi

Yasuharu Nakajima

Akira Inoue

Yukio Ohta

Yoshihiro Notani

Kei Goto

Takayuki Katoh

Takayuki Matsumoto

Tomoaki Nakamura

A probe card has an edge sensor. The edge sensor has a first needle and a second needle. The first needle and the second needle are in contact with each other when the first needle and a wafer are not in contact with each other, and the first needle and the second needle are not in contact with each other when the first needle and the wafer are in contact with each other. The probe card has a resistor connected between the first needle and the second needle.

Probe card, semiconductor measuring device, and semiconductor measuring system

An apparatus of testing a semiconductor element applies pulsed voltages synchronized with each other, respectively, to a gate and a drain of a semiconductor element being tested and measures current flowing through the semiconductor element in response to the pulsed voltages thus applied. The testing apparatus produces pulsed I-V characteristics considering the influences of self heating and surface energy levels of the semiconductor element and RF swing along a load line during large signal operation.

Method for testing semiconductor element

A semiconductor element evaluating apparatus for evaluating an electrical characteristic of a semiconductor element used in a microwave band includes a pedestal having first and second waveguide parts for exchanging signals with external devices and penetrating the pedestal, a mode converting carrier member placed on the pedestal and having first and second waveguide parts and first and second microstrip lines sandwiching a region where a semiconductor element is to be mounted, and waveguide terminal structures placed on the mode converting carrier member. The first and second waveguide parts of the pedestal, the mode converting carrier member, and the terminal parts form first and second waveguides. One semiconductor element can be exchanged for another semiconductor element merely by exchanging one mode converting carrier member for another, and the length of the transmission line is shortened whereby transmission loss is reduced.

Semiconductor element evaluating apparatus

An integrated circuit device includes a substrate, circuit elements on the substrate, and an electrically conductive thermoplastic resin substance electrically connecting the circuit elements on the substrate. Therefore, since variations in the configuration of the thermoplastic resin are quite small relative to those of interconnecting wires, variation in parasitic inductance due to variation in the configuration of the connections is reduced and the uniformity and the reproducibility of the high frequency characteristics of the integrated circuit device are enhanced. A method for fabricating an integrated circuit device includes forming circuit elements on a substrate and forming an electrically conducting thermoplastic resin substance electrically connecting the circuit elements.

Integrated circuit device and fabricating thereof

An integrated circuit device includes a substrate; circuit elements including an active element and a bias line for applying a DC bias voltage to the active element, disposed on the substrate; a thermoplastic material layer disposed on a region of the substrate; and a magnetic substance layer disposed on a region of the substrate including a region of the bias line, and adhered to and supported by the thermoplastic material layer. In this structure, the magnetic substance layer can be formed in an appropriate shape and at an appropriate position on the bias line according to the oscillation characteristics of the active element, such as a transistor, and the magnetic substance layer absorbs the frequency components of the oscillation of the active element, whereby oscillation of the active element is easily prevented. Further, since the magnetic substance layer is disposed on the bias line, unwanted increase in the chip area of the integrated circuit device due to the use of the prior art oscillation preventing circuit is avoided.

Integrated circuit device

In a semiconductor integrated circuit, an amplifier FET and a gate bias FET, having the same structure as the amplifier FET and a total gate width smaller than that of the amplifier FET, are disposed close to each other. The gate bias FET is a constituent of a gate bias circuit for the amplifier FET, and the current determined by the drain current of the gate bias FET, first and second resistors respectively connected to drain and source of the gate bias FET, and a diode connected in series to the first resistor is applied to the amplifier FET as a gate bias voltage. In this structure, if the DC characteristic of the amplifier FET varies from chip to chip, the DC characteristic of the gate bias FET formed in the vicinity of and simultaneously with the amplifier FET also varies. Therefore, it is possible to make the operating current value of the amplifier FET consistent throughout a plurality of IC chips regardless of differences in the drain current of the amplifier FET, resulting in uniform high frequency characteristics, such as input-output characteristics, of the IC chips.

Growing community of inventors

Tokyo, Japan

Hiroto Matsubayashi