Semiconductor Energy Laboratory Co., Ltd.

Hiroto Inoue

Shunpei Yamazaki

Harue Osaka

Takayuki Inoue

Erumu Kikuchi

A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

Plasma treatment apparatus, method for forming film, and method for manufacturing thin film transistor

An object is to provide a new halogenated diarylamine compound serving as a source material for synthesis of a variety of diarylamine compounds and triarylamine compounds and a synthesis method of the new halogenated diarylamine compound. A halogenated diarylamine compound represented by the following general formula (G1) and a synthesis method thereof are provided. Note that a variety of diarylamine compounds and triarylamine compounds can be synthesized using the halogenated diarylamine compound represented by the following general formula (G1).

Growing community of inventors

Atsugi, Japan

Hiroto Inoue