Sony Semiconductor Solutions Corporation

Sony Corporation

Hirotaka Yoshioka

Nobutoshi Fujii

Suguru Saito

Yuichi Yamamoto

Minoru Ishida

Hideki Kobayashi

Satoru Wakiyama

Hiroshi Tazawa

Hiroyasu Matsugai

Naoki Komai

Kaoru Koike

Taizo Takachi

Hiroyuki Itou

Keiji Ohshima

Kyohei Mizuta

Toshiaki Shiraiwa

Osamu Oka

Kengo Kotoo

Kenta Nojima

Kenya Nishio

Kenta Ikeda

A backside-illumination solid-state image pickup apparatus and a backside-illumination solid-state image-pickup-apparatus manufacturing method, an image pickup apparatus, and electronic equipment that are configured to make it possible to reduce manufacturing costs. A diced memory circuit and logic circuit are laid out in a horizontal direction, are embedded and flattened by using an oxide film, and are stacked so as to be enclosed in a plane direction under a solid-state image pickup element. The present disclosure can be applied to an image pickup apparatus.

Backside-illumination solid-state image pickup apparatus, image pickup apparatus, and electronic equipment including embedment members

An imaging device according to an embodiment of the present disclosure includes: a first semiconductor substrate () provided with pixels including a photoelectric conversion element (PD) and floating diffusion (FD) that temporarily holds a charge output from the photoelectric conversion element (PD); and a semiconductor layer (Y) provided on the first semiconductor substrate () via an insulating film (), the semiconductor layer (Y) including a readout circuit unit () that reads out the charge held in the floating diffusion (FD) and outputs a pixel signal, in which the semiconductor layer (Y) is formed of an organic semiconductor material.

Imaging device and electronic device

The present disclosure relates to an imaging apparatus and electronic equipment that make it possible to reduce peeling stresses at angled sections included in the four corners of a lens, and prevent the lens from being peeled off. An imaging apparatus includes a solid-state imaging element that generates a pixel signal by photoelectric conversion according to a light amount of incident light, a glass substrate provided on the solid-state imaging element, and a lens provided on the glass substrate, in which four corners of the lens that is substantially rectangular when seen in a plan view do not have angles equal to or smaller than 90°. The present technology may be applied to an imaging apparatus and the like, for example.

Imaging apparatus and electronic equipment for peeling off prevention in lens

Substrates with lenses having lenses disposed therein are aligned with high accuracy. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are direct-bonded and stacked. In particular, one or more air grooves formed in surfaces of the substrates reduces an influence of air inside a void portion between adjacent lenses of a layered lens structure.

Lens attached substrate, layered lens structure, manufacturing method thereof, and electronic device

There is provided a solid state image pickup apparatus including a first semiconductor substrate and a second semiconductor substrate which are bonded to each other, and a buried portion formed in a peripheral portion of the apparatus with a depth of a bonded surface of the first semiconductor substrate and the second semiconductor substrate in such a manner that the bonded surface of the first semiconductor substrate and the second semiconductor substrate is not exposed.

Image pickup apparatus, semiconductor device, and electronic device including a buried portion disposed adjacent to a bonding portion, and method for manufacturing the same

There is provided a solid-state imaging device including a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer, a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate, a connection unit region in which a connection section is provided, the connection section having a first through electrode, a second through electrode, and a connection electrode connecting the first through electrode and the second through electrode, and an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.

Solid-state imaging device, method of manufacturing solid-state imaging device, apparatus for manufacturing semiconductor device, method of manufacturing semiconductor device, and electronic device

Growing community of inventors

Kumamoto, Japan

Hirotaka Yoshioka