Ablic Inc.

Hirotaka Uemura

Yohei Ogawa

Atsushi Igarashi

Takaaki Hioka

Takahiro Kato

A semiconductor device includes a semiconductor substrate: a vertical Hall element formed in the semiconductor substrate, and having a magnetosensitive portion; a first excitation wiring disposed above the magnetosensitive portion, and configured to apply a first calibration magnetic field (M) to the magnetosensitive portion; and second excitation wirings disposed above the magnetosensitive portion on one side and on another side of the first excitation wiring, respectively, along the first excitation wiring as viewed in plan view from immediately above a front surface of the semiconductor substrate, and configured to apply second calibration magnetic fields (M) to the magnetosensitive portion.

Semiconductor device

A magnetic sensor includes a magneto-sensitive portion (); an excitation wiring () formed in a wiring region above the magneto-sensitive portion () through intermediation of an insulating film (), the excitation wiring () including a plurality of conductor portions (, and) arranged in in order across at least one radial direction from a center axis of the magneto-sensitive portion (); a current flowing through the excitation wiring () having a current density of which an absolute value becomes zero in a vicinity of a center of the magneto-sensitive portion () and continuously increases toward an outer side of the magneto-sensitive portion (); and a magnetic field generated by the current flowing through the excitation wiring () in a direction vertical to the surface of the magneto-sensitive portion ().

Magnetic sensor

A semiconductor device includes a semiconductor substrate having a surface perpendicular to the first direction; a vertical Hall element formed in the semiconductor substrate, and including a magnetosensitive portion having a depth in the first direction, a width in the second direction, and a length in the third direction; and an excitation wiring extending in the third direction and disposed above the semiconductor substrate and at a position that overlaps the center position of the width of the magnetosensitive portion, and the value u derived from Expression (1) is 0.6 or more: where W is the width of the magnetosensitive portion, Wc/2 is a distance from the center position of the width of the magnetosensitive portion to the first end surface closer thereto, and h is a distance from the center position of the depth of the magnetosensitive portion to the excitation wiring.

A magnetic sensor has a Hall IC that has a Hall element formed on a surface of the Hall IC, and a lead frame that supports the Hall IC. The lead frame includes a first region that is disposed in the vicinity of the Hall element and generates a first magnetic field due to a first eddy current generated when a measurement target magnetic field is applied, and second regions that are disposed away from the first region and generate a second magnetic field having an intensity that cancels the first magnetic field by means of second eddy currents generated when the measurement target magnetic field is applied.

Magnetic sensor and magnetic detection method

A magnetic substance detection sensor includes a first support substrate, a magnet disposed on the upper main surface of the first support substrate so that a magnetization direction becomes parallel to the upper main surface of the first support substrate, a semiconductor chip disposed on the upper main surface of the first support substrate and having a magnetic field detection element configured to detect a magnetic field component in a specific direction, and a soft magnetic substance film disposed on the lower main surface of the first support substrate and extending in a direction parallel to the magnetization direction of the magnet.

Magnetic substance detection sensor

A semiconductor device includes a semiconductor substrate; a vertical Hall element including a magnetosensitive portion, and formed in the semiconductor substrate; and an excitation wiring provided above a surface of the semiconductor substrate and apart from the magnetosensitive portion. The excitation wiring is formed of a single wiring with a plurality of turns. The excitation wiring includes a plurality of main wiring portions arranged side by side, and apart from one another in an overlapping region that overlaps the magnetosensitive portion as viewed in plan view from a direction orthogonal to the surface of the semiconductor substrate; and auxiliary wiring portions connecting each of the plurality of main wiring portions to one another in series.

A semiconductor device includes a semiconductor substrateof a first conductivity type, a vertical Hall elementprovided on the semiconductor substrate, and an excitation conductorprovided directly above the vertical Hall elementwith an intermediation of an insulating film. The vertical Hall elementincludes a semiconductor layerof a second conductivity type provided on the semiconductor substrate, and a plurality of electrodesthrougheach constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layeralong a straight line. A ratio W/Wbetween a width Wof the excitation conductorand a width Wof each of the plurality of electrodesthroughsatisfies 0.3&#x2264;W/W&#x2264;1.0.

A magnetic substance detection sensor includes a support substrate, a semiconductor chip provided on the support substrate and having a magnetic field detection element, a permanent magnet provided on the support substrate, and a resin encapsulation layer covering the semiconductor chip and the permanent magnet. The resin encapsulation layer has a first resin layer exposing the permanent magnet and covering the semiconductor chip, and a second resin layer continuously covering the permanent magnet and the first resin layer, and stress caused by curing contraction of the second resin layer is smaller than that of the first resin layer.

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Chiba, Japan

Hirotaka Uemura