Mitsubishi Chemical Corporation

Hirotaka Oota

Kenji Fujito

Shuichi Kubo

Kazumasa Kiyomi

Hirobumi Nagaoka

Isao Fujimura

A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a wavelength of 450 nm is 20% or less and the difference between the maximum reflectance and the minimum reflectance is within 10%, (b) the ratio of maximum value to minimum value (maximum value/minimum value) of the dislocation density measured by a cathode luminescence method is 10 or less, and/or (c) the lifetime measured by a time-resolved photoluminescence method is 95 ps or more.

Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0&#x3c;=x&#x3c;=1, 0&#x3c;=y&#x3c;1, 0&#x3c;z&#x3c;=1, 0&#x3c;s&#x3c;=1 and 0&#x3c;=t&#x3c;1) on a substrate

A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nmis produced by cleaning the surface having a dangling bond density of higher than 14.0 nmwith a cleaning agent containing an ammonium salt.

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Ibaraki, Japan

Hirotaka Oota