Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Hirotaka Ohno

Takuya Kadoguchi

Tomoyuki Watanabe

Masataka Deguchi

Hideo Nakamura

Akihiro Ueda

Koji Yasui

Nobuaki Inagaki

A power converter includes: a plurality of power modules that houses semiconductor elements for electric power conversion; a pair of holding plates sandwiching a stacked body of the plurality of power modules in the first direction; a pair of connecting beams that connects the pair of holding plates respectively on both side ends of the stacked body in the second direction intersecting the first direction; and a substrate connected to control terminals of the power modules. At least one of the pair of holding plates is provided with a positioner to position the substrate.

Power converter

A semiconductor module includes: first semiconductor devices; second semiconductor devices; a first and second wires. Each first semiconductor device comprises: first sealing resin; first-third terminals; a first semiconductor chip connected to the first and third terminals. Each second semiconductor device comprises: second sealing resin; fourth-sixth terminals; a second semiconductor chip connected to the fourth and fifth terminals, and not connected to the sixth terminal. The first and second semiconductor devices are stacked along a stacking direction. The first terminals and the fourth terminals are arranged in a line along the stacking direction. The second terminals and the fifth terminals are arranged in a line along the stacking direction. The third terminals and the sixth terminals are arranged in a line along the stacking direction. The first wire is connected to the fifth terminals. The second wire is connected to the third terminals.

Semiconductor module, semiconductor device, and method for manufacturing semiconductor devices

In a power converter, a plurality of semiconductor devices and a plurality of cooling plates are stacked. The plurality of semiconductor devices includes a first-first sealed semiconductor device, a second-first sealed semiconductor device, and a plurality of second sealed semiconductor devices. The first-first sealed semiconductor device has a first high potential side terminal, and a first low potential side terminal. The second-first sealed semiconductor device has a second high potential side terminal, and a second low potential side terminal. When viewed along a stacking direction, the first high potential side terminal is disposed to overlap with the second low potential side terminal.

This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.

Semiconductor device

A semiconductor device of the present invention has a purpose to form a structure of preventing outflow of solder at low costs. A semiconductor element is bonded to a substrate through a solder layer. An outflow-preventing part is provided to surround the solder layer to prevent solder outflow during soldering. The outflow-preventing part is formed by a cold spray method and has a surface in an oxidized state.

Semiconductor device and manufacturing method thereof

A semiconductor device is formed by molding using a resin with a semiconductor element and one or two heat dissipating plates contained therein, said one or two heat dissipating plates being disposed to face one surface or both the surfaces of the semiconductor element. An intermediate layer is formed by spraying a metal powder to the semiconductor element and to one of or both of the heat dissipating plates using a cold spray method, and the semiconductor element and the heat dissipating plate are bonded together using a solder with the intermediate layer therebetween.

Semiconductor device adapted to improve heat dissipation

A purpose of the application is to provide a semiconductor device production method capable of reducing complexity of production operations and keeping production costs low, and enhancing reliability, and a semiconductor device. One aspect of the invention provides a method of producing a semiconductor device, the method including a first bonding step of bonding a first electrode plate and a semiconductor device portion, and a second bonding step of bonding the semiconductor device portion and a second electrode plate. The method includes a sealing step of forming a sealed composite body by covering target surfaces of a composite body formed by the first bonding step with resin, the target surfaces being surfaces other than a second surface of the first electrode plate and the second surface of the semiconductor device portion. The second bonding step is performed after the sealing step.

Semiconductor device production method and semiconductor device

Disclosed is a semiconductor device wherein the adhesion of resin to a substrate is improved at a low cost. A semiconductor element and one or two substrates opposing one or both of the surfaces of the semiconductor element are sealed by a resin, a resin bonding coat which is formed by spraying a metal powder by a cold spray method is formed on one or both of the substrates, and recess portions which are widened from a film surface in a depth direction are formed on the resin bonding coat.

A bus bar has a lead portion and a bus bar portion which are integrally shaped. The lead portion is provided in such a shape that branches from the bus bar portion. A part of the lead portion forms a connection part directly electrically connected with a transistor electrode and a diode electrode by a connecting material such as solder. The thickness of the lead portion including the connection part is made smaller than the thickness of the bus bar portion. Accordingly, such an interconnection structure can be provided in which the electrode of the semiconductor device and the bus bar are electrically directly connected with each other and thermal stress at the connection part therebetween can be relieved.

Growing community of inventors

Miyoshi, Japan

Hirotaka Ohno