Rohm Co., Ltd.

Hirotaka Obuchi

Nobuaki Matsui

Takao Fujimori

Kazuaki Tsutsumi

Yasuo Nakanishi

Junichi Itai

Hideaki Anzai

An LED package includes a substrate with a front surface and a back surface spaced apart from each other in a thickness direction of the substrate. First and second wirings are formed on the substrate. An LED chip is mounted on the front surface of the substrate and electrically connected to the first and second wirings. A sealing resin, such as silicone, covers the LED chip. The substrate is made up of glass cloths laminated in the thickness direction and an impregnated resin, such as acrylic resin, impregnated in the glass cloths.

LED package and LED display device

In a light-emitting element (), a light-emitting layer (), a second conductivity type semiconductor layer (), a transparent electrode layer (), a reflecting electrode layer () and an insulating layer () are stacked in this order on a first conductivity type semiconductor layer (), while a first electrode layer () and a second electrode layer () are stacked on the insulating layer () in an isolated state. The light-emitting element () includes a plurality of insulating tube layers (), discretely arranged in plan view, passing through the reflecting electrode layer (), the transparent electrode layer (), the second conductivity type semiconductor layer () and the light-emitting layer () continuously from the insulating layer () and reaching the first conductivity type semiconductor layer (), first contacts (), continuous from the first electrode layer (), connected to the first conductivity type semiconductor layer () through the insulating layer () and the insulating tube layers (), and second contacts (), continuous from the second electrode layer (), passing through the insulating layer () to be connected to the reflecting electrode layer ().

Light-emitting element, light-emitting element unit, and light-emitting element package

A semiconductor light emitting device includes a substrate made of resin, a first wiring and a second wiring formed on the substrate, a light emitting element disposed on the substrate and electrically connected to the first wiring and the second wiring, and a transparent sealing resin configured to seal the light emitting element. The substrate contains an acrylic resin, and the sealing resin contains silicone.

Semiconductor light emitting device

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Light emitting device and light emitting device package

A semiconductor light emitting element is disclosed. The element includes a substrate including a first surface, a second surface opposite to the first surface, and a side surface that connects the first surface and the second surface; a semiconductor layer formed on the first surface of the substrate and configured to generate light; and a light reflective layer formed on the second surface of the substrate to cover an entire region of the second surface of the substrate and configured to reflect the light generated by the semiconductor layer toward the semiconductor layer. A modified layer, which has a physical property different from that of the other portion of the substrate, is formed on the side surface of the substrate to be spaced apart from the first surface toward the second surface by altering a material forming the substrate.

Semiconductor light emitting element and manufacturing method thereof

A semiconductor light emitting device includes a substrate having a first major surface and a second major surface, a semiconductor layer that includes a first semiconductor layer of a first conductive type formed on the first major surface of the substrate, a light emitting layer formed on the first semiconductor layer and a second semiconductor layer of a second conductive type formed on the light emitting layer, and a mesa structure formed in the semiconductor layer by selectively notching the first semiconductor layer, the light emitting layer and the second semiconductor layer so as to expose the first semiconductor layer, and a ratio of a luminescent area of the light emitting Layer with respect to an area of the first major surface of the substrate being set to equal to or smaller than 0.25.

Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current

A semiconductor light emitting device includes a substrate made of resin, a first wiring and a second wiring formed on the substrate, a light emitting element disposed on the substrate and electrically connected to the first wiring and the second wiring, and a transparent sealing resin configured to seal the light emitting element. The substrate contains an acrylic resin, and the sealing resin contains silicon.

A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device

A semiconductor light emitting device includes: an n-type layer; a p-type layer; and an emission layer interposed between the n-type layer and the p-type layer and having a multiple quantum well (MQW) structure in which barrier layers and quantum well layers are alternately stacked over a plurality of periods, wherein n-type impurity concentrations of the barrier layers disposed up to a predetermined &#x3b1;-th layer (where &#x3b1; is a natural number), when counting from the p-type layer, are smaller than an n-type impurity concentration of the barrier layer disposed at an (&#x3b1;+1)-th layer counting from the p-type layer.

In a light-emitting element, a light-emitting layer, a second conductivity type semiconductor layer, a transparent electrode layer, a reflecting electrode layerand an insulating layerare stacked in this order on a first conductivity type semiconductor layer, while a first electrode layerand a second electrode layerare stacked on the insulating layerin an isolated state. The light-emitting elementincludes a plurality of insulating tube layers, discretely arranged in plan view, passing through the reflecting electrode layer, the transparent electrode layer, the second conductivity type semiconductor layerand the light-emitting layercontinuously from the insulating layerand reaching the first conductivity type semiconductor layer, first contacts, continuous from the first electrode layer, connected to the first conductivity type semiconductor layerthrough the insulating layerand the insulating tube layers, and second contacts, continuous from the second electrode layer, passing through the insulating layerto be connected to the reflecting electrode layer

Growing community of inventors

Kyoto, Japan

Hirotaka Obuchi