Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Hirotaka Nakano

Thunekazu Yoshino

Hiroshi Morita

Kensaku Yano

Yuko Kubota

Taketoshi Kato

Tatumi Goto

Nobuo Hayashi

The bonding sheet of the present invention comprises a substrate having an opening, and a low-melting point bonding metal which closes the opening or is arranged on the peripheral portion of the opening, to project in the opening. According to a bonding sheet of the present invention, a low-melting point bonding metal is interposed between a conductor pattern of a substrate and electrode terminals of an electronic component, and is bonded by thermocompression at a low temperature without melting the low-melting point bonding metal, so that bonding of a large number of electrode terminals can be completed by a single bonding operation.

Bonding sheet for electronic component and method of bonding electronic

A film carrier according to this invention comprises a base film, a plurality of conductors formed on the base film, and a plurality of layers formed on the conductors, each being made of a low-melting point bonding metal. A bonding method of this invention comprises the steps of aligning the bonding metal layers of the film carrier with the terminals of an electronic part, and half-melting the bonding metal layers by thermocompression, thereby to electrically connect the conductors of the film carrier to the terminals of the electronic part. The object of the present invention is to provide a film carrier which can serve to connect electronic parts to a circuit by means of a low pressure and at a low temperature, without causing damage to the electronic parts such as semiconductor elements, and also a bonding method using this film carrier.

Film carrier and bonding method using the film carrier

A film carrier according to this invention comprises a base film, a plurality of conductors formed on the base film, and a plurality of layers formed on the conductors, each being made of a low-melting point bonding metal. A bonding method of this invention comprises the steps of aligning the bonding metal layers of the film carrier with the terminals of an electronic part, and half-melting the bonding metal layers by thermo-compression, thereby to electrically connect the conductors of the film carrier to the terminals of the electronic part. The object of the present invention is to provide a film carrier which can serve to connect electronic parts to a circuit by means of a low pressure and at a low temperature, without causing damage to the electronic parts such as semiconductor elements, and also a bonding method using this film carrier.

According to this invention the argon gas laser for emitting monochromatic light at 4880 .ANG. is provided comprising an elongated envelope with a capillary filled mainly with argon gas, an optical resonator comprising a high reflectance multilayer mirror and an output coupling multilayer mirror facing each other and disposed along the optical axis of the envelope. A cathode electrode and an anode electrode are disposed within the envelope for discharging the gas. Each mirror comprising alternate stacked layers of relatively high refractive index materials and relatively low refractive index materials. The high reflective mirror having a high reflectance band with a center wavelength .lambda..sub.0 containing a laser wavelength .lambda..sub.L within said band which satisfies the following expression:

Argon gas laser device

A solar cell and a method of manufacturing the same are disclosed. The solar cell has a semiconductor substrate having a major surface for receiving light, a p-n junction for photovoltatic generation therein and a thin alumina coating layer on the major surface of the semiconductor substrate. The alumina coating layer includes H radicals and OH radicals.

Solar cell

A patterned layer article for semiconductor devices or stripe filters of color television cameras characterized by using, as a base, a protective layer of an etching rate smaller than that of a thin layer for controlling the etching depth of the thin layer, and this protective layer, particularly consists of oxides of rare earth elements such as yttrium oxide, and scandium oxide.

Growing community of inventors

Yokohama, Japan

Hirotaka Nakano