Seiko Epson Corporation

Hirotaka Kawata

Toshiharu Matsushima

Tsuyoshi Maeda

Eiji Okamoto

Kinya Ozawa

Osamu Okumura

Kimitaka Kamijo

Takumi Seki

Hiroaki Mochizuki

Yoshio Taniguchi

Junichi Taira

Hidetoshi Ushiyama

Deterioration of display quality due to a difference of leak current in each pixel is suppressed. A pixelG includes a pixel capacitorand a switching elementwhich controls supplying and blocking of voltage with respect to the pixel capacitor, and modulates irradiation light of a first wavelength (530 nm) according to the voltage of the pixel capacitor. A pixelR includes the pixel capacitorand the switching elementthat controls supplying and blocking of voltage with respect to the pixel capacitor, and modulates irradiation light of a second wavelength (620 nm) which is longer than the first wavelength according to the voltage of the pixel capacitor. A capacitance value of the pixel capacitorof the pixelG is larger than a capacitance value of the pixel capacitorof the pixelR.

Electro-optic device and electronic equipment

Provided is an electro-optical device including: a pair of substrates; an electro-optical material sandwiched between the pair of substrates; a seal material disposed in a seal region located at the periphery of a region in which the electro-optical material is provided on the pair of substrates so as to bond the pair of substrate to each other, between the pair of substrates; and a coloring layer provided in a concave portion formed in the region in which the electro-optical material is provided on one substrate, wherein a upper surface of a coloring layer facing the electro-optical material is formed nearer to the other substrate than a seal region surface overlapping with the seal material on one substrate.

Electro-optical device, color filter substrate and electronic apparatus

An electro-optical device includes a transistor, a data line, a pixel-potential-side capacitor electrode, a relay layer, an output line, a first and a second scanning line. The transistor includes a first and a second gate electrode. The data line is connected to the transistor via a first contact hole. The relay layer is formed from the same film as the data line, and connected to the pixel-potential-side capacitor electrode via a second contact hole. The output line is formed from the same film as the data line and allows the scan signal from a driving circuit to pass therethrough. The first scanning line is formed from the same film as the first gate electrode and connected to the output line via a third contact hole. The third contact hole is opened in the same process of opening the first contact hole. The second scanning line is formed from the same film as the second gate electrode and connected to the output line via a fourth contact hole. The fourth contact hole includes a first opening opened in the same process of opening the first contact hole and a second opening opened in the same process of opening the second contact hole. The first and the second opening overlap each other.

Electro-optical device and electronic apparatus including same

A method of driving an electro-optical device having a plurality of pixels which are formed to correspond to intersections between a plurality of scan lines and a plurality of data lines and each of which exhibits a grayscale of output light corresponding to a data signal sampled and supplied to the corresponding data line when the corresponding scan line is selected is provided. The method includes: selecting the plurality of scan lines in a predetermined order; dividing a period of time, when one of the scan lines is selected, into a first period and a second period; selecting m (where m is an integer greater than or equal to 2) lines from one of an odd group and an even group consisting of odd-numbered and even-numbered data lines, respectively, in the first period; selecting m data lines from the other of the odd group and the even group of data lines in the second period; and sampling data signals supplied to m image signal lines and supplying the sampled data signals to the selected m data lines.

Electro-optical device, method of driving electro-optical device, driving circuit, and electronic apparatus

A substrate for an electro-optical device includes a plurality of scanning lines arranged in rows; a plurality of data lines arranged in columns and grouped into blocks, each of the blocks including n data lines, where n indicates an integer of 2 or more; a plurality of terminals that receive data signals for the corresponding blocks; a demultiplexer that selects a data line designated by a control signal from among the n data lines within each of the blocks and that supplies to the data line selected in the block the corresponding data signal received by the corresponding terminal for the block; a plurality of pixels disposed in association with intersections of the plurality of scanning lines and the plurality of data lines, some or all of the plurality of pixels performing display in accordance with the data signals supplied to the data lines when selection of the corresponding scanning lines is performed; and a checking circuit. The checking circuit includes n read lines; a plurality of first switches each provided for a different data line, one end of each of the plurality of first switches being connected to a corresponding data line and the other end of each of the plurality of first switches being connected to one of the n read lines such that the other ends of the plurality of first switches corresponding to the n data lines belonging to an identical block are connected to different read lines; and a shift register that selects one of the blocks so as to allow conduction of first switches whose other ends are connected to the n data lines belonging to the selected block.

Substrate for electro-optical device, electro-optical device, and checking method

An electro-optical device substrate has substrate devices, each composed of at least a portion of an electro-optical device having an image display region, on a surface thereof, and is divided into the substrate devices along boundaries between regions where the substrate devices are formed. The electro-optical device substrate includes testing wiring lines which are provided in regions other than the substrate device forming regions on the substrate, and which are respectively supplied with testing signals for the substrate devices, two or more image signal terminals being electrically connected to each testing wiring line.

Electro-optical device substrate, electro-optical device, and testing method

The invention provides a reflection type liquid crystal device, and a projection type display and electronic equipment in which display defects caused by disclination are reduced, minimized or prevented from being produced for a highly fine liquid crystal display with a space between pixels made to be narrow to make it possible to provide a high-contrast and bright display. A liquid crystal device includes a liquid crystal layer sandwiched between a first substrate and a second substrate, and a first electrode and a second electrode formed on a face of the above-described second substrate on a side of the above-described liquid crystal layer. The above-described first electrode and the above-described second electrode are formed so that an electric field substantially parallel to the surface of the substrate with respect to the above-described liquid crystal layer can be applied thereto. The above-described first electrode is formed in a linear shape having a specified line width on the above-described second electrode with a second insulation film interposed therebetween. The above-described second electrode is formed in a rectangular shape, and at least one of the above-described first electrode and the above-described second electrode is a reflecting electrode that causes incident light coming from a direction of the above-described first substrate.

Liquid crystal device, projection type display and electronic equipment

A driving circuit for an electro-optical device includes scan lines, data lines, and pixel portions, arranged in an image display region on a substrate. The driving circuit includes a data line driving circuit to supply a first sampling signal and a second sampling signal sequentially to the sampling switches. Each sampling switch to supply an image signal of an image signal line to each of the data lines corresponding to the first sampling signal and the second sampling signal. Each of the sampling switches includes a first transistor for sustaining the image signal according to the first sampling signal and a second transistor electrically connected in series to the first transistor for supplying the image signal sustained by the first transistor to the data lines according to the second sampling signal.

Driving circuit for electro-optical device, electro-optical device, and electronic apparatus

A TFT is provided completely separated by an insulating film, in which a parasitic MOSFET is not generated at ends of a semiconductor layer, and the variation in characteristics is small. At least one portion of the ends in the gate-width direction of a gate electrode forming the TFT is disposed in a semiconductor region which forms the TFT, and the ends in the gate-length direction of the gate electrode extend toward the outside of the semiconductor region forming the TFT. With this arrangement, a uniform TFT in which a parasitic MOSFET is not generated at the ends in the gate-width direction is obtainable.

TFT structure for suppressing parasitic MOSFET in active display

Electro-optical device and electronic equipment using the same

The potential at a channel region of a MOSFET on a substrate needs to be stabilized to assure a drain withstand voltage. To this end, a new potential line is additionally required. However, the addition of the potential line causes a drop in the aperture ratio in a transmissive type liquid-crystal display device, in which lightness is particularly important. A light shielding layer overlapping the MOSFET formed on the substrate is electrically connected to the channel region in the MOSFET.

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Suwa, Japan

Hirotaka Kawata