Sumco Techxiv Corporation

Sumco Corporation

Hirotaka Kato

Kazuhiro Narahara

Koichiro Hayashida

Yasuyuki Hashimoto

Takahiro Nagasawa

A semiconductor wafer evaluation method includes acquiring a reflection image as a bright-field image by receiving reflected light which is obtained when irradiating one surface side of a semiconductor wafer to be evaluated with light; acquiring a scattered image as a dark-field image by receiving scattered light which is obtained when irradiating the surface side of the semiconductor wafer with light; and obtaining a distance between a bright zone that is observed in the reflection image and a bright zone that is observed in the scattered image. The semiconductor wafer to be evaluated is a semiconductor wafer in which a chamfered surface is formed in a wafer outer peripheral edge section, and the method includes evaluating a shape of a boundary part between a main surface on the surface side irradiated with the light of the semiconductor wafer to be evaluated and a chamfered surface adjacent to the main surface.

Semiconductor wafer evaluation method and semiconductor wafer manufacturing method

A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Method of manufacturing epitaxial silicon wafer and apparatus therefor

A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.

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Nagasaki, Japan

Hirotaka Kato