Asahi Kasei Microdevices Corporation

Asahi Kasei Kabushiki Kaisha

Hirotaka Geka

Hiromi Fujita

Osamu Morohara

Atsushi Okamoto

Ichiro Shibasaki

Yoshiki Sakurai

Disclosed is an infrared detecting device with a high SNR. The infrared detecting device includes a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light receiving layer formed on the first layer; and a second layer formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.

Infrared detecting device

An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlInSb (0.05<z<0.18). The side surfaces and an upper surface of the mesa structure are covered with the protective layer. A part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer. The oxide layer includes an oxide of Al and has no oxide of Sb.

Disclosed is an infrared detecting device with a high SNR. The infrared detecting deviceincludes a semiconductor substrate; a first layerformed on the semiconductor substrate and having a first conductivity type; a light receiving layerformed on the first layer; and a second layerformed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.

Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate; a first layerhaving a first conductivity type on the semiconductor substrate; a light receiving layeron the first layer; and a second layerhaving a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlInSb (0.05&#x3c;x&#x3c;0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

Disclosed is an infrared light emitting device including: a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light emitting layer formed on the first layer; and a second layer formed on the light emitting layer and having a second conductivity type, wherein the first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0&#x3c;t&#x2264;2360&#xd7;(y(1)&#x2212;x(j))&#x2212;240 (0.11&#x2264;y(1)&#x2212;x(j)&#x2264;0.19), 0&#x3c;t&#x2264;&#x2212;1215&#xd7;(y(1)&#x2212;x(j))+427 (0.19&#x3c;y(1)&#x2212;x(j)&#x2264;0.33), and 0&#x3c;x(j)&#x3c;0.18.

Infrared light emitting device

An objective is to provide a semiconductor device capable of utilizing properties of a high-mobility electron transport layer with a thin film stacked structure having large &#x394;Ec, high electron mobility, and simplified element fabrication process even when the substrate material and the electron transport layer greatly differ in lattice constant. The semiconductor device includes: a semiconductor substrate (); a first barrier layer () on the substrate (); an electron transport layer () on the first barrier layer (); and a second barrier layer () on the electron transport layer (). The first barrier layer () has an InAlAs layer. At least one of the first barrier layer () and the second barrier layer () has a stacked structure having an AlGaAsSblayer in contact with the electron transport layer () and an InAlAs layer in contact with the AlGaAsSblayer. The stacked structure is doped with a donor impurity.

Semiconductor device having a thin film stacked structure

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlInSb mixed crystal layer formed on a substrate, and an InAsSb(0&#x3c;x&#x2266;1) thin film conducting layer directly formed on the AlInSb layer, in which the AlInSb mixed crystal layer is a layer that exhibits higher resistance than the InAsSbthin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsSbthin film conducting layer, and the a lattice mismatch is +1.3% to &#x2212;0.8%.

Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination

The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlGaInSb mixed crystal layer (0&#x2266;x, y&#x2266;1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.

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Tokyo, Japan

Hirotaka Geka