Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Hirotaka Amasuga

Tetsuo Kunii

Yoshitsugu Yamamoto

Satoshi Suzuki

Akira Inoue

Takayuki Matsuzuka

Takahide Ishikawa

Masahiro Totsuka

Naoki Kosaka

Youichi Nogami

Kou Kanaya

A semiconductor circuit substrate includes a transistor-forming substrate and a circuit-forming substrate. The transistor-forming substrate is a GaN substrate and has a Bipolar Junction Transistor (BJT) located in its top surface. The bottom surface of the transistor-forming substrate is flat and has contact regions. The circuit-forming substrate is a material other than a compound semiconductor and has no semiconductor active elements. The circuit-forming substrate has a flat top surface, contact regions buried in and exposed at the top surface, and passive circuits. The transistor-forming substrate and the circuit-forming substrate are directly bonded together without any intervening film, such as an insulating film.

Semiconductor device and semiconductor circuit substrate

A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.

Semiconductor device including field effect transistor with reduced electric field concentration

A field-effect transistor with improved moisture resistance without an increase in gate capacitance, and a method of manufacturing the field-effect transistor are provided. The field-effect transistor includes: a T-shaped gate electrode on a semiconductor layer; and a first highly moisture-resistant protective film including one of an insulating film and an organic film having high etching resistance, the first highly moisture-resistant protective film being located above the T-shaped gate electrode, over all of a region in which the T-shaped gate electrode is located. A cavity is located between the semiconductor layer and the first highly moisture-resistant protective film, below a canopy of the T-shaped gate electrode. An end surface of the cavity is closed by a second highly moisture-resistant film.

Field-effect transistor and method of manufacturing the same

A low-cost field-effect transistor with a moisture-resistant gate covered by a thick moisture-resistant insulating film which suppresses an increase in gate capacitance, and a method of manufacturing the field-effect transistor. The field-effect transistor has one of a T-shaped gate electrode and &#x393;-shaped gate electrode, a drain electrode, and a source electrode, the source electrode and the drain electrode being electrically connected through an n-doped semiconductor region. The gate, source, and drain electrodes are located on a semiconductor layer which includes an insulating film having a thickness of 50 nm or less and covering a surface of the gate electrode and a surface of the semiconductor layer. A silicon nitride film, deposited by catalytic CVD, covers the insulating film and includes a void volume located between a portion of the gate electrode corresponding to a canopy of an open umbrella and the semiconductor layer.

A field-effect transistor includes a channel layer formed of a III-V compound semiconductor excluding aluminum; a gate contact layer formed of a III-V compound semiconductor and provided on the channel layer, the III-V compound semiconductor having a dopant concentration equal to or less than 1&#xd7;10cm, containing aluminum, and having a large band gap energy; a gate buried layer of a III-V compound semiconductor and provided on the gate contact layer; and a gate electrode buried in the gate buried layer and in contact with the gate contact layer. A recess in the gate buried layer is opposed to an upper side wall of the gate electrode with a gap therebetween and a part of the gate buried layer, and where a contact with a lower side wall of the gate electrode is established, part of the gate buried layer remains without being removed.

Field-effect transistor

A semiconductor device includes a substrate having a recess, a gate electrode in the recess in the substrate, and a source electrode and a drain electrode disposed on opposite sides of the gate electrode. An insulating film is on at least on a surface of the gate electrode and a portion in the recess, other than where the gate electrode is located, and a shield electrode connected to the source electrode is located on a portion of the insulating film between the gate electrode and the drain electrode.

Semiconductor device with recessed gate and shield electrode

A cascode circuit in which two field effect transistors ('FET') are connected in cascode has a first FET having its source grounded, a second FET having its source connected to the drain of the first FET, and a Schottky barrier diode having an anode connected to the source of the first FET and a cathode connected to the gate of the second FET.

Cascode circuit

The present method includes steps of: discharging a droplet of fluid containing fine particles with electric characteristics from an inkjet nozzle onto the microwave integrated circuit formed on a substrate; forming a coat of the fine particles having electric characteristics on the substrate; measuring electric characteristics of the microwave integrated circuit using a probe of a circuit evaluation apparatus before and after forming the coat; and adjusting the electric characteristics of the microwave integrated circuit, so that forming the coat at a desired location on the upper surface of the circuit substrate by scanning an aim of the inkjet nozzle against the circuit substrate enables the microwave integrated circuit to meet the specification.

Growing community of inventors

Tokyo, Japan

Hirotaka Amasuga