Samsung Electronics Co., Ltd.

Hirosige Goto

Sang Chul Sul

Kyo Jin Choo

Kyung Ho Lee

Masaru Ishii

Myung Won Lee

Gwi Deok Ryan Lee

Sae Young Kim

Kyung Bae Park

Jin Ho Seo

Kyu Sik Kim

Yun Kyung Kim

Kwang Hee Lee

Young-Gu Jin

Tae-Chan Kim

Dong-Ki Min

Kwang-hee Lee

Sae-Young Kim

Gwideokryan Lee

Myungwon Lee

Yi Tae Kim

SangChul Sul

Kang-Su Lee

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2&#xd7;2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Image sensor, method for manufacturing the same, and image processing device having the image sensor

Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

Organic pixels including organic photodiode, manufacturing methods thereof, and apparatuses including the same

Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.

CMOS image sensor based on thin-film on asic and operating method thereof

An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

CMOS image sensor

An image sensor includes a sensing node to sense photo charges output from a photodiode. The sensing node includes a first dopant region of a first conductivity type and a second dopant region of a second conductivity type. The second dopant region surrounds the first dopant region. A third dopant region of the first conductivity type is adjacent to the second dopant region and is disposed around the sensing node. The first, second, and third dopant regions operate as a source, a gate, and a drain of a junction field effect transistor, respectively.

Complementary metal-oxide-semiconductor (CMOS) image sensor including a junction field effect transistor

Provided is an image sensor including a source follower transistor. The source follower transistor may include a channel structure that is provided between a source and a drain, and includes a first semiconductor layer, a second semiconductor layer, and a blocking structure. The first semiconductor layer may be spaced apart from a gate insulating layer of the source follower transistor by a first depth or more. Carriers may move from the source of the source follower transistor to the drain thereof through the first semiconductor layer.

Image sensor including source follower

An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method

An image sensor includes a pixel array and a calibration circuit. The pixel array includes a plurality of pixels each of which includes a photoelectric conversion device configured to absorb incident light and generate a photocharge, a transfer transistor configured to transfer the photocharge from the photoelectric conversion device to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node. The calibration circuit is connected to the reset transistor of each pixel, and is configured to apply a different voltage to each pixel and adjust an amount of photocharge generated by the photoelectric conversion device in each pixel.

Image sensor and image processing device including the same

Image sensor configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method

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Suwon-si, South Korea

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