Nec Corporation

Elpida Memory, Inc.

Micron Technology Incorporated

Mutoh Industries Ltd.

Hiroshi Yoshino

Yoshihiro Takaishi

Haruo Iwasaki

Atsushi Nishizawa

Kazushi Suzuki

Tsuyoshi Yoshii

Norihiko Samoto

Disclosed herein is a semiconductor device that includes a plurality of segment regions arranged with a first distance, each of segment regions including a plurality of first grooves arranged with a second distance that is smaller than the first distance, and a second groove enclosing the plurality of the segment regions with a third distance that is larger than the second distance. The third distance may be substantially equal to the first direction.

Semiconductor device with an overlay mark including segment regions surrounded by a pool region

A method of manufacturing a semiconductor device includes the following processes. A first resist layer covering an etching object is patterned to form a first resist pattern. Then, a filling layer that covers the first resist pattern and has a flat upper surface is formed. Then, a second resist layer covering the flat upper surface is patterned to from a second resist pattern.

Method of manufacturing semiconductor device

A semiconductor-device manufacturing method includes forming an element separating insulating film on a semiconductor substrate; forming a gate multilayer film for forming a gate electrode thereon; removing the gate multilayer film in an alignment mark forming area positioned on the element separating insulating film; forming a pattern of a first conductive film in the element forming area; forming an alignment mark of the first conductive film, used in photolithography, in the alignment mark forming area surrounded by the gate multilayer film; forming an inter-layer insulating film thereon; removing the inter-layer insulating film in the alignment mark forming area, so that it remains on the gate multilayer film around the alignment mark forming area; removing or thinning the element separating insulating film around the alignment mark; and forming a pattern of a second conductive film on the inter-layer insulating film by performing alignment of the photolithography by using the alignment mark.

Method of manufacturing a semiconductor device

An antireflection film includes a base resin and an additive resin, the additive resin having a dry etching rate higher than that of the base resin. A photoresist pattern is formed and the antireflection film is selectively etched using the photoresist pattern as a mask. The molecular weight and weight percent of the additive resin are selected to provide an etching rate for the antireflection film that permits selective removal of the antireflection film while leaving an effective amount of the photoresist.

Multi-resin material for an antireflection film to be formed on a

A resist processing system comprising a resist processing chamber 11, an air filter 14 and an air intake unit 15 for introducing air into the processing chamber 11 through the air filter 14, the air filter 14 having a housing 18 and a diffusion scrubber 19 separating a first space and a second space within the housing 18, the first space having a liquid inlet port 21A and a liquid outlet port 21B for passing a liquid therethrough, the second space having an air inlet port 20A and an air outlet port 20B for passing the air from the air intake unit therethrough.

Resist processing system

A magnetic disk storage unit has a sealing container accommodating at least a magnetic disk and at least a magnetic head and being provided with at least an air hole through which air pass between interior and exterior to adjust a pressure of an internal gas within the sealing container, wherein the air hole is provided with a gas adsorbent comprising carbon fibers made from a high polymer having cyano groups.

Electronic device container having an air hole screened with a harmful

A preliminary sensor read unit (83A) performs preliminary sensor read for a movable ring (38) by using a sensor (29) with a pencil (20) set in an upper position. After the preliminary sensor read, a knock control unit (83B) performs a single lead-knocking operation for the pencil. After the lead-knocking operation, a determining sensor read unit (83C) performs determining sensor read for the movable ring by using the sensor, with the pencil set in the upper position. Using a determining threshold prepared on the basis of a sensor value obtained by the preliminary sensor read, a determining unit (83D) discriminates a difference between a sensor value of the determining sensor read and the sensor value of the preliminary sensor read and determines whether or not the length of the lead held by the movable ring has an effective value for plotting.

Growing community of inventors

Tokyo, Japan

Hiroshi Yoshino