Tokyo Electron Limited

Hirata Corporation

Hiroshi Yoshida

Hideaki Sato

Jun Nonaka

Takao Inada

Takashi Nagai

Kouji Ogura

Takahiro Kawazu

Yoshinori Nishiwaki

Koji Ogura

Hisashi Kawano

Hiromi Hara

Tsukasa Hirayama

Takumi Honda

Toshiyuki Shiokawa

Keita Hirase

Jian Zhang

Teruaki Konishi

Yuki Ishii

Seigo Fujitsu

A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

Substrate processing apparatus, mixing method, and substrate processing method

A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.

A control device for a substrate processing apparatus stores a plurality of records each including a recipe for a substrate etching processing and a control value for a control target, the control value being an actual output value for the control target in the substrate etching processing; acquires a recipe at a start of the substrate etching processing when an abnormality occurs in the temperature sensor or in the concentration sensor; reads a record from among the plurality of records having a recipe identical to the recipe acquired at the start of the substrate etching processing; and executes the substrate etching processing based on the control value of the record read by the processor.

Control device and substrate processing method

A substrate liquid processing apparatus includes a processing tub configured to store a processing liquid therein; a processing liquid supply configured to supply the processing liquid into the processing tub; a processing liquid drain device configured to drain the processing liquid from the processing tub; and a controller configured to control the processing liquid supply and the processing liquid drain device. The controller calculates, in response to an instruction to change a concentration of a preset component of the processing liquid stored in the processing tub, a drain amount and a feed amount of the processing liquid from/into the processing tub based on information upon a current concentration of the preset component, information upon a concentration increment thereof per unit time and information upon the changed concentration thereof, and controls the processing liquid supply and the processing liquid drain device based on the calculation result.

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

Substrate processing apparatus, substrate processing method and recording medium

A substrate processing apparatus includes: a mixer that mixes a first phosphoric acid and an additive serving as raw materials of a processing liquid with each other at a predetermined mixing ratio, thereby preparing a mixed liquid; a mixing ratio corrector that corrects the mixing ratio of the raw materials of the processing liquid; a processing unit that processes a substrate with the processing liquid. The mixer includes a mixing tank that stores the mixed liquid, a first phosphoric acid supply that supplies the first phosphoric acid to the mixing tank, and an additive supply that supplies the additive to the mixing tank. The mixing ratio corrector includes a liquid line through which the mixed liquid is delivered from the mixer to the processing unit, and a second phosphoric acid supply connected to the liquid line so as to supply second phosphoric acid to the liquid line.

A substrate processing method includes generating a plurality of records each including a piece of recipe information in a substrate processing in association with control value information of a control target in the substrate processing, storing the plurality of records generated in the generating, acquiring recipe information input by an operator when performing the substrate processing, reading a record including recipe information identical to the recipe information acquired in the acquiring, and controlling the control target based on the control value information in the recipe information of the record read in the reading.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

A substrate liquid processing apparatus includes a processing tubA which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrateis performed by immersing the substrate in the stored processing liquid; a concentration sensorB configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit() configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensorB configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unitconfigured to correct, based on a detection value of the head pressure sensor, the set concentration.

Substrate liquid processing apparatus

The device for insertion and assembly of workpieces relating to the present invention is a device for insertion and assembly of workpieces for insertion and assembly of a first workpiece to a positioned second workpiece, and comprises means for advancing and retreating which causes the advance and retreat of the first workpiece toward said second workpiece, and means for rotating to rotate either workpiece around an axis Z being a line extending in the direction of advance and retreat of the first workpiece with respect to said second workpiece; wherein said means for advancing and retreating comprises a slider supported advanceably and retreatably with respect to the second workpiece by a body portion, means for holding connected to said slider and holding the first workpiece, and means for applying resilient energy to provide a prescribed resilient energy between the slider and said means for holding. Production costs can be greatly reduced and the device as a whole is made lightweight and compact, while having a great capacity to correspond to machine type regardless of workpiece type and model, etc., and enabling the simple and mathematical setting of conditions, even for workpieces with different assembly conditions.

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Kumamoto, Japan

Hiroshi Yoshida