Eudyna Devices Inc.

Hiroshi Yano

Ryuji Yamabi

Ken Nakata

Takeshi Kawasaki

Masataka Watanabe

A semiconductor device has an electrode pad, a capacitor and a substrate. The substrate has a given area on which the electrode pad and the capacitor are arranged. The electrode pad and the capacitor are arranged on the substrate so that each of at least two sides of the capacitor and each of at least two sides of the electrode pad is adjacent to each other at a given interval. The capacitor has a connecting side that connects the two sides of the capacitor and faces to the electrode pad. Outside angles of the capacitor formed by the connecting side and the two sides of the capacitor are more than 90 degrees.

Semiconductor device having an electrode pad

A method for fabricating a semiconductor device includes: forming a dummy gate that defines a region in which a gate electrode should be formed on a semiconductor substrate; forming a surface film on the semiconductor substrate by directional sputtering vertical to a surface of the semiconductor substrate, the directional sputtering being one of collimate sputtering, long throw sputtering and ion beam sputtering; removing the surface film formed along a sidewall of the dummy gate; removing the dummy gate; and forming the gate electrode in the region from which the dummy gate on the semiconductor substrate has been removed.

Method for fabricating a semiconductor device

A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.

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Yamanashi, Japan

Hiroshi Yano