Asahi Glass Company, Limited

Kawasaki Steel Corporation

Mitsubishi Electric Corporation

Agc Inc.

Hiroshi Yamamoto

Yumiko Kawano

Hiroshi Shinriki

Tomohiro Ohta

Katsuya Ueno

Tadashi Nakano

Nobuyuki Takeyasu

Eiichi Kondoh

Takeshi Kaizuka

Tomoharu Katagiri

Katsuya Fujii

Masato Fukushima

Hidekazu Okamoto

Kunio Watanabe

Hiroaki Mitsuoka

Hiroki Murakami

Mai Tasaka

Takashi Moriyama

Wahei Shingu

Kazuyoshi Kurashima

A compressor includes a container provided with an oil reservoir which is provided at a bottom portion of the container to allow oil to be collected in the oil reservoir. In the container, an electric motor mechanism, a rotary shaft, a compression mechanism, and a frame which fixes the compression mechanism to the container are provided. In the frame, a suction port is formed to cause refrigerant having flowed into the space to flow into the compression mechanism, and each of a suction portion and a connection port of the suction pipe, is located at a position which is higher than or the same as the level of the rotary shaft as seen in a rotation axial direction A rib in a first flow passage extends downwards in the direction of gravity from the connection port, extends through an area located above the oil reservoir, and reaches the suction port.

Compressor and refrigeration cycle apparatus

To provide a composition for a heat cycle system having less influence over the ozone layer, having a low global warming potential and having excellent durability, and a heat cycle system. A composition for a heat cycle system comprising a working fluid containing trifluoroethylene and difluoromethane, and a lubricating oil, wherein the interaction distance (Ra) between trifluoroethylene and the lubricating oil as determined from the Hansen solubility parameters is shorter than the interaction distance (Ra) between difluoromethane and the lubricating oil.

Composition for heat cycle system, and heat cycle system

A composition for a heat cycle system having less influence over the ozone layer, a low global warming potential, and excellent stability and durability is provided. A heat cycle system using the composition is also provided. The composition contains a working fluid and a phosphoric acid ester. The working fluid contains trifluoroethylene and difluoromethane. An interaction distance (Ra) between the working fluid and the phosphoric acid ester as determined from the Hansen solubility parameters is at most 15.

To provide a method for purifying R-1234yf, whereby it is possible to efficiently remove even impurities such as R-1243zf, etc. which are difficult to separate by distillation purification, from a mixture containing R-1234yf as the main component and various impurities, such as a gas formed by reacting R-1214ya with hydrogen. The method for purifying R-1234yf comprises a step of bringing a mixture which contains R-1234yf as the main component and also contains hydrohaloalkene impurities other than R-1234yf and hydrohaloalkane impurities, into contact with a solvent that has an extraction/removal index (r), as represented by the formula r=[4&#xd7;(&#x3b4;D&#x2212;17.2)+(&#x3b4;P&#x2212;8.3)+(&#x3b4;H&#x2212;2.6)], of at most 6.5, so as to remove at least a part of the hydrohaloalkene impurities and hydrohaloalkane impurities.

Method for purifying 2,3,3,3-tetrafluoropropene

A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

Method for making metal interconnection

A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

Method for making metal interconnection with chlorine plasma etch

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Chiyoda-ku, Japan

Hiroshi Yamamoto