Fuji Photo Optical Co., Ltd.

Kabushiki Kaisha Toshiba

Sanyo Electric Co., Ltd.

Fujifilm Corporation

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Canon Kabushiki Kaisha

The United States of America, As Represented by the Secretary, Department of Health and Human Services

Hitachi, Ltd.

University of California

Autoliv Development Ab

Unisia Jecs Corporation

Fujitsu Corporation

Hiroshi Yamada

Hiroyuki Shinogi

Kazuhiko Itaya

Takashi Noma

Kazuo Okada

Katsuhiko Kitagawa

Shinzo Ishibe

Yuichi Morita

Yutaka Onozuka

Tadahiro Sasaki

Yoshinori Seki

Noboru Okubo

Akiko Nagahara

Michio Cho

Hideyuki Funaki

Shigeki Otsuka

Keiichi Tateishi

Hiroshi Koshikawa

Kazuhiro Suzuki

Kazuhide Abe

Dennis M Klinman

Akira Suzuki

Atsuko Iida

Toshihiko Nagano

Masato Kumagai

Yukihiro Takao

Mitsuru Okigawa

Yoshiaki Nagata

Shinya Hayashi

Taihei Nakada

Osamu Iwasaki

Hiroki Hayashi

Chikara Yamamoto

Kiyoshi Takeuchi

Minoru Nozawa

Michihiko Nishigaki

Yoshihiro Nakai

Nobuaki Kobayashi

Yukinori Midorikawa

Yasunori Takei

Naoyuki Hanaki

Jun Kawai

Koichi Kuhara

Masuo Matsuki

Tomoyuki Inoue

Katsutoshi Yano

Kiyoshi Ogawa

Liwei Lin

Hiroki Sugiura

Yoshikazu Doi

Keiichi Yamaguchi

Hisayoshi Uchiyama

Akane Hisanaga

Katsu Horikoshi

Masanori Iida

Satoshi Hashimoto

Kazuyoshi Mori

Toshiro Kishikawa

Armon Mahajerin

Kevin Limkrailassiri

Kitoshi Ogawa

A liquid ejection apparatus is equipped with a liquid ejection head configured to eject a supplied liquid, a storage unit configured to store the liquid to be supplied to the liquid ejection head, a pivot member configured to be dipped in the stored liquid in the storage unit and be revolvable according to the amount of the liquid, and a detection unit configured to detect the amount of the liquid by use of the pivot member, wherein the arrangement position of the detection unit differs according to the specific gravity of the liquid stored in the storage unit.

Liquid ejection apparatus

A liquid ejection apparatus includes: a storage chamber which is connectable to a cartridge storing liquid and stores liquid supplied from the cartridge; a movable member provided in the storage chamber and including a float and a detection target portion, the float being lower in specific gravity than the liquid stored in the storage chamber; and a detection unit which detects movement of the movable member by detecting the detection target portion. The detection target portion is movable from a first position to a third position through a second position. The detection unit is arranged to detect the detection target portion in a case where the detection target portion is present at the second position.

Liquid ejection apparatus and cartridge

A technique with which deterioration in a function of detecting the remaining amount of liquid can be prevented even in a case where the liquid is thickened or solidified is to be provided. A liquid ejection apparatus is provided with a liquid ejection head configured to eject supplied liquid, a storage unit configured to store the liquid to be supplied to the liquid ejection head, a pivot member configured to be immersed in the liquid stored in the storage unit and be revolvable according to the amount of the liquid, and a detection unit configured to detect the amount of the liquid by use of the pivot member, and the liquid ejection apparatus includes a pivot unit configured to force the pivot member to pivotally move.

An organic photoelectric conversion element composition including a p-type-and-n-type linked organic semiconductor polymer represented by any one of formulas (1) to (5), a thin film and a photovoltaic cell each containing the same, an organic semiconductor polymer and a compound each for use in these, and a method of producing the polymer: 

Organic photoelectric conversion element composition, thin film and photovoltaic cell each containing the same, organic semiconductor polymer and compound each for use in these, and method of producing the polymer

An imaging lens consists of a first lens group, a second lens group, an aperture stop and a third lens group that has positive refractive power in this order from an object side. The first lens group consists of an L11 lens having positive refractive power, an L12 lens having negative refractive power, an L13 meniscus lens having negative refractive power with its concave surface facing an image side, an L14 lens having negative refractive power with its concave surface facing the object side and two or three lenses, each having positive refractive power, in this order from the object side. The second lens group consists of an L2p lens having positive refractive power and an L2n lens having negative refractive power.

Imaging lens and imaging apparatus

A reconfigured wafer of resin-encapsulated semiconductor packages is obtained by supporting with a resin, thereafter, a grinding process is performed on top and backside surfaces to expose only a bump interconnection electrode on a surface of a semiconductor chip. Further, a chip-scale package is obtained by a dicing process along a periphery of the chip.

Semiconductor package including a plurality of chips

An imaging lens, consisting of a first lens group, a top, and a second lens group having a positive refractive power, in order from the object side, in which the first lens group is composed of a first front lens group having a negative refractive power and a first rear lens group having a positive refractive power in order from the object side, the first rear lens group is composed of a cemented lens formed of a negative lens and a positive lens, the first front lens group at least includes four negative lenses, and at least two of the negative lenses included in the first front lens group satisfy a conditional expression given below:70&#x3c;&#x3bd;1&#x2003;&#x2003;(1).

A circuit board according to an embodiment is one in which a plurality of electronic components is mounted on a printed wiring board. The circuit board includes a semiconductor component that is mounted on the printed wiring board, and the semiconductor component includes a semiconductor device and a first EBG structure formed on or above the semiconductor device. An operating frequency of the semiconductor device exists outside a cutoff band of the first EBG structure, and the first EBG structure is connected to a ground or a power supply of the printed wiring board.

Electronic circuit and semiconductor component

An azo pigment or a tautomer thereof represented by the following Formula (1), and having characteristic X-ray diffraction peaks at Bragg angles (2&#x3b8;&#xb1;0.2&#xb0;) of 6.5&#xb0;, 7.1&#xb0; and 21.8&#xb0; in the CuK&#x3b1; characteristic X-ray diffraction. 

Azo pigment, method for preparing azo pigment, dispersion including azo pigment, coloring composition, and inkjet recording ink

There is provided a pigment dispersion including an azo pigment or a tautomer thereof represented by the following Formula (1) and having characteristic X-ray diffraction peaks at Bragg angles (2&#x3b8;&#xb1;0.2&#xb0;) of 4.8&#xb0;, 7.2&#xb0; and 9.7&#xb0; in a CuK&#x3b1; characteristic X-ray diffraction. 

Dispersion including azo pigment, coloring composition, inkjet recording ink and method for preparing dispersion

A semiconductor package of an embodiment includes: a semiconductor chip having a signal input terminal and a signal output terminal; and a cap unit that is formed on the semiconductor chip. The cap unit includes a concave portion forming a hollow structure between the semiconductor chip and the cap unit, a first through electrode electrically connected to the signal input terminal, and a second through electrode electrically connected to the signal output terminal. Of the inner side surfaces of the concave portion, a first inner side surface and a second inner side surface facing each other are not parallel to each other.

Semiconductor package having a cap unit with concave portion and method of manufacturing the same

After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.

Semiconductor device and method of manufacturing the same

A first lens group including two aspherical lenses, a second lens group consisting of three negative meniscus lenses, each negative meniscus lens having a convex surface facing the enlargement side, a third lens group having a negative refractive power and including at least one cemented lens, and a fourth lens group having a positive refractive power and including at least two cemented lenses and one aspherical lens are arranged in this order from the enlargement side. Predetermined conditional expressions are satisfied.

Wide-angle projection lens and projection display device using the same

A wide angle lens includes: a positive first lens group, a second lens group, constituted by two or fewer lenses, that moves during focusing operations, and a third lens group that includes at least one positive lens, provided in this order from the object side. The first lens group includes at least a positive meniscus lens with a convex surface toward the object side, a negative meniscus lens with a convex surface toward the object side, a lens having a concave surface with a radius of curvature having a smaller absolute value toward the image side, a negative lens, a cemented lens formed by a positive lens and a negative lens, and an aperture stop provided adjacent to the cemented lens toward the image side thereof, provided in this order from the object side. The wide angle lens satisfies a predetermined conditional formula.

Wide angle lens and imaging apparatus

An EBG (Electromagnetic Band Gap) structure according to an embodiment includes: an electrode that is made of a first conductor; a first insulating layer that is provided on the electrode; a patch unit that is provided in substantially parallel with the electrode on the first insulating layer, the patch unit including a first gap, the patch unit being made of a second conductor; a second insulating layer that is provided on the patch unit; a first via that is provided between the patch unit in the first insulating layer and the electrode and connected to the patch unit and the electrode; and a second via that is provided in the first and second insulating layers, the second via piercing the first gap and being connected to the electrode.

EBG structure and circuit board

Growing community of inventors

Kanagawa, Japan

Hiroshi Yamada