Canon Anelva Corporation

Hiroshi Yakushiji

Masahiro Shibamoto

Reiji Sakamoto

Yuto Watanabe

Yuzuru Miura

Kazuto Yamanaka

Masahiro Atsumi

Tsutomu Hiroishi

Hidekazu Nishimura

Shogo Hiramatsu

Susumu Karino

Provided are a laminated body and a laminated body manufacturing method that can improve adhesiveness between a resin layer and a seed layer. The laminated body has a substrate, a first wiring layer, a resin layer, and a second wiring layer in this order, and the second wiring layer includes at least an adhesive layer and a seed layer in this order.

Method for manufacturing a laminated body

An ion gun according to one embodiment of the present invention has an anode, a cathode having a first portion and a second portion that face the anode, and a magnet that creates a spatial magnetic field between the first portion and the second portion. An annular gap including a curved portion is provided between the first portion and the second portion of the cathode. The magnet creates lines of magnetic field having the bottom inside with respect to the sectional center line of the gap between the first portion and the second portion of the curved portion.

Ion gun and vacuum processing apparatus

A vacuum process method for a magnetic recording medium having a surface protective layer for protecting a magnetic recording layer formed on a substrate includes a ta-C film forming step of forming a ta-C film on the magnetic recording layer, a transportation step of transporting a substrate on which the ta-C film is formed, a radical generation step of generating radicals by exciting a process gas, and a radical process step of irradiating a surface of the ta-C film with the radicals.

Vacuum process apparatus and vacuum process method

A deposition method of arranging a discharge portion of a striker near a target to induce arc discharge and forming a film on a substrate using a plasma generated by the arc discharge is disclosed. The method includes a changing step of changing a position for inducing the arc discharge by the striker in a region set in the target, a deposition step of forming the film on the substrate using the plasma generated by inducing the arc discharge at the position, and a reduction step of reducing the region in accordance with use of the target.

Deposition method and deposition apparatus

A plasma processing apparatus includes a processing chamber configured to process a substrate, a plasma generator configured to generate a plasma, a transport unit configured to transport, to the processing chamber, the plasma generated by the plasma generator, and a scanning magnetic field generator configured to generate a magnetic field which deflects the plasma so as to scan the substrate by the plasma. The scanning magnetic field generator is configured to be capable of adjusting a center of a locus of the plasma.

Plasma processing apparatus and plasma processing method

A deposition apparatus includes a plasma generator for generating a plasma by arc discharge, and a deposition unit for forming a film on a member by the plasma generated by the plasma generator. The plasma generator includes a target holder for holding a target and applying a negative potential to the target, an anode to which a positive potential is applied, and a capture for capturing droplets from the target. The anode has an opening, and the capture is arranged in the opening.

Deposition apparatus

A vacuum arc deposition apparatus for forming a ta-C film on a substrate using arc discharge includes a holding unit that holds a target unit, an anode unit into which electrons emitted from the target unit flow, and a power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge. The current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz.

Vacuum arc deposition apparatus and deposition method

In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.

Growing community of inventors

Tokyo, Japan

Hiroshi Yakushiji