Sharp Kabushiki Kaisha Corporation

Hiroshi Umeda

Kazuo Tamaki

Masanobu Okano

Masayuki Itoh

Atsushi Yamashita

Kazuaki Sasaki

Masahiro Konishi

Hiroshi Tanaka

Junichi Nakamura

Manabu Onozaki

Masamichi Harada

Kazuaki Kaneko

Yusuke Shibata

Yasuhiko Arai

An illumination device () includes a light guide plate () and a light source unit () which includes a substrate () and a plurality of LED chips () disposed on the substrate (), and which is disposed in a position at which emitted light of the LED chips () enters a light entrance portion () of the light guide plate (). The LED chips () are disposed to form a plurality of rows on the substrate (), and are disposed to line up in a direction which orthogonally intersects the rows between each of the rows.

Illumination device, illumination equipment, and display device

A method for manufacturing a light-emitting device of the present invention includes a step in which solid-state sealing resin () containing a phosphor () and the solid-state sealing resin () containing a phosphor () are arranged in recesses in package resin () having LED chips placed thereon, are thereafter melted by heating, and, in addition, are cured by heating.

Method for manufacturing light-emitting device

A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.

Semiconductor light-emitting device having annular shape light emitting region and current blocking layer

A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH.sub.3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.

Method for producing light-emitting diode

Growing community of inventors

Osaka, Japan

Hiroshi Umeda