Matsushita Electric Industrial Co., Ltd.

Toshiba Matsushita Display Technology Co., Ltd.

Hiroshi Tsutsu

Masumi Izuchi

Yutaka Miyata

Yutaka Nanno

Tetsuya Kawamura

Yoshinao Taketomi

Mikihiko Nishitani

Masashi Goto

Keizaburo Kuramasu

Hiroshi Satani

Mamoru Furuta

Hikaru Nishitani

Yoshiko Mino

Koji Akiyama

Hiroshi Tsutsui

Tetsu Ogawa

Mika Nakamura

Katsumi Adachi

Tetsuo Kawakita

Shin-itsu Takehashi

Naomi Kaneko

Tatsuo Yoshioka

Shigeki Maegawa

Kouji Senda

Hironori Tanaka

A number of minuscule LDD thin film transistors with high precision are arranged on a substrate for use in a liquid crystal display apparatus or other similar devices. The gate electrode is used as a mask at the time of injecting impurities into the semiconductor layer. To realize an LDD structure, the impurities are injected in two installments. The size of the gate electrode is changed in accordance with the length of the LDD regions between the first and second injections. The size of the gate electrode is changed by means of metal oxidation or dry etching. For precision dry etching of the gate electrode, various ideas are put into forming the photo resist.

Method for fabricating thin film transistor

An organic EL display panel includes a substrate, pixel electrodes, a common electrode, signal lines, power supply lines, thin-film transistors, scan lines, organic EL elements and storage capacitors. To obtain a full color image by light emissions of the organic EL elements, red, green and blue emitters are patterned correspondently with the pixel electrodes and arranged in this order along the gate line direction. The emitters are patterned such that each pair of the red, green and blue emitters which are adjacent to each other along the gate line direction overlap each other to define a light-emitting layer overlap region, where colors of light components which exit the organic EL elements and pass through the emitters are mixed, between the adjacent organic EL elements arranged along the gate line direction. At least one of the thin-film transistor and the storage capacitor is arranged in the light-emitting layer overlap region.

Organic EL display panel

A unit pixel () includes a plurality of current controlling elements (Tr&#x2013;Tr) having controlling terminal and connected to a single EL element (), and switching elements (Tr&#x2013;Tr) provided to the respective current controlling elements in order to switch between application and cutoff of a digital image signal with respect to the controlling terminals in accordance with the condition of a scanning signal. Each of the current controlling elements is controlled by a voltage of the digital image signal so as to take an OFF state for cutting off a supply of a driving current to the EL element or an ON state for supplying the EL element with a driving current corresponding to the voltage of the digital image signal, and a value of the current flowing in the EL element is the sum value of currents supplied from the respective current controlling elements in the ON state. Based on a combination of the current controlling elements in the ON state, the current supplied to the EL element is controlled to be a value corresponding to the gradation.

Active matrix EL display device and method of driving the same

In a large-sized substrate for use in liquid crystal display devices, microcracks in a gate insulating film are prevented from being generated, whereby warpage of the substrate is suppressed. In order to solve the problems, in thin film transistors arrayed on a glass substrate, the gate insulating film is made thicker only in the portion that is directly under a gate line layer.

Thin-film transistor, and liquid crystal display device using the same

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate . In the insulation layer, a lower insulation layer , which is in contact with the transparent insulating substrate , is made to have a higher thermal conductivity than an upper insulation layer . Thereafter, the upper insulation layer is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer . Thus, the amorphous silicon thin film is formed into a polycrystalline silicon thin film

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

An object of the present invention is, by eliminating a driver IC from the components of an liquid crystal display, to achieve a cost reduction, to eliminate a manufacturing step of mounting the driver IC onto an array substrate, and to reduce a thickness of the liquid crystal display. A driver circuit for an active matrix liquid crystal display comprises a resistive dividing type digital-to-analog converter circuit (DAC). An analog output voltage from the DAC is amplified by a signal amplifier element, and a liquid crystal element is driven by the amplified analog output voltage. The driver circuit is characterized in that a resistance element R is formed in an n&plus; layer of p-Si on an array substrate of the liquid crystal display, and a switching element Tr and a signal amplifier element are also formed on the array substrate.

Drive circuit for active matrix liquid crystal display

A thin film semiconductor device includes: a substrate having an insulating surface; a semiconductor layer containing silicon and germanium formed on the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a thermal oxide film formed by thermally oxidizing a surface of the semiconductor layer.

Thin film semiconductor device, method for fabricating the same and semiconductor device

Thin film semiconductor device, method for fabricating the same and

A method for forming a polycrystalline semiconductor thin film according to the present invention includes the steps of: forming a semiconductor thin film partially containing microcrystals serving as crystal nuclei for polycrystallization on an insulating substrate; and polycrystallizing the semiconductor thin film by laser annealing.

Method for forming polycrystalline thin film and method for fabricating

A method for fabricating an active matrix substrate for forming constituent elements such as a semiconductor layer, a passivation layer, an electrode material and other elements, uses a photoresist exposed from the reverse side of the substrate, using the gate electrode pattern made of opaque material on a transparent substrate as the mask. This method contributes to lowering the cost and improving the performance of semiconductor devices.

Method for fabricating active substrate

An active matrix substrate includes a transparent substrate, pairs each having an n-type thin-film transistor and a p-type thin-film transistor formed on the transparent substrate, gate bus lines and source bus lines connected to the n-type and p-type transistors for controlling the n-type and p-type transistors, and pixel-corresponding electrodes controlled by the transistor pairs respectively. Drains of an n-type transistor and a p-type transistor in each of the pairs are connected to each other via a related pixel corresponding electrode. First pulses are applied to gates of the n-type transistors. Second pulses are applied to gates of the p-type transistors. There is provided a difference in phase between the first pulses and the second pulses.

Active matrix substrate device and related method

A spatial light modulator and a neural network circuit are disclosed. The modulator is used in pattern recognition and has an arrangement in which a photoconductive layer held between conductive electrodes is connected in series to a liquid crystal cell including a liquid crystal layer held between two opposite electrodes. Setting the rate between the area of the photoconductive layer and the area of at least one of the opposite electrodes between which the liquid crystal layer is disposed, provides a highly efficient reflective and transmissive spatial light modulator of a simple structure. Both reflective and transmissive spatial light modulating elements are applied to a neurocomputer or the like.

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Osaka, Japan

Hiroshi Tsutsu