Japan Tobacco Inc.

Renesas Electronics Corporation

Honda Motor Co., Ltd.

Other

Mitsubishi Denki Kabushiki Kaisha

Panasonic Intellectual Property Management Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Otsuka Koki Kabushiki Kaisha

Hiroshi Tsukamoto

Takeshi Yamamoto

Yoshimitsu Takakura

Akira Yajima

Hiromi Shigihara

Toshiki Mine

Satoru Masuda

Hisao Shigihara

Masako Ichikawa

Hitomi Kajiwara

Hiroki Ishikawa

Masatoshi Gohbara

Yoko Hamada

Satoru Inoue

Hiroshi Suganuma

Hiroshi Tanaka

Noboru Takahashi

Fumikage Yamanaka

Masao Yamada

Takashi Nakanishi

Satoru Usami

Naomi Oka

Tomoya Sugiyama

Fumiki Tsutsumi

Ryoutarou Suzuki

Masahiko Komatsubara

Takahiko Midori

Tadaharu Hieda

Naoto Nitta

Tsuneo Namai

Yoko Fukuhara

Emi Kawamura

Shingo Hori

Yasuhiro Koyama

Masahiro Imamachi

Michiyo Takabayashi

An acoustic processing device performs acoustic processing in a space having a first listening position and a second listening position apart from the first listening position. The acoustic processing device includes a first input unit, a first output unit, and a signal processing circuit. The first input unit receives a first sound source signal to be reproduced at the first listening position. The first sound source signal includes a first left-channel signal and a first right-channel signal. The first output unit outputs the first sound source signal to a first speaker group including a first speaker disposed near a place of a head of a listener at the first listening position. The signal processing circuit draws out a first common signal common to both the first left-channel signal and the first right-channel signal and outputs the first common signal to the first speaker.

Acoustic processing device, acoustic processing method, and recording medium

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

Semiconductor integrated circuit device

To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Semiconductor device and manufacturing method of same

In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.

Semiconductor integrated circuit device and method of manufacturing the same

The present invention provides an extremely useful and novel &#x3b2;-galactoside-&#x3b1;2,6-sialyltransferase having an optimum reaction pH in a neutral to alkaline range, and a nucleic acid encoding the sialyltransferase. The present invention further provides a vector carrying a nucleic acid encoding the sialyltransferase, and a host cell transformed with the vector, as well as a method for producing a recombinant &#x3b2;-galactoside-&#x3b1;2,6-sialyltransferase.

&#x3b2;-galactoside-&#x3b1;2,6-sialyltransferase, a gene encoding thereof, and a method for enhancing enzyme activity

The present invention provides a method of binding a protein to a carrier in such a way that the protein is not impaired in its function but can be allowed to act more efficiently than when it is bound directly. The method of the present invention for binding a protein to a carrier comprises:

Method of binding proteins to carriers by making use of tamavidins

A chopper type DC-DC converter includes a voltage converting circuit, a comparative wave generating circuit, a comparator group, and a switch control circuit. The voltage converting circuit converts a first voltage into a second voltage. The comparative wave generating circuit generates first and second comparative waves such that the voltage range of the first comparative wave is different from the voltage range of the second comparative wave. The comparator group generates a first comparison result signal indicating a result of comparison between the first comparative wave and an error signal indicating an error between the second voltage and target voltage and a second comparison result signal indicating a result of comparison between the second comparative wave and the error signal. The switch control circuit controls the voltage converting circuit based on the first and second comparison signals. The comparative wave generating circuit includes first and second comparative wave generating circuits. The first and second comparative wave generating circuits respectively generate the first and second comparative waves based on different source voltage groups.

Chopper type DC-DC converter

The present invention provides a novel &#x3b2;-galactoside-&#x3b1;2,6-sialyltransferase having high productivity and/or high activity, and a nucleic acid encoding the sialyltransferase. The present invention also provides a microorganism producing the sialyltransferase. The present invention further provides a vector carrying a nucleic acid encoding the sialyltransferase, and a host cell transformed with the vector, as well as a method for producing a recombinant &#x3b2;-galactoside-&#x3b1;2,6-sialyltransferase.

&#x3b2;-Galactoside-&#x3b1;2, 6-sialyltransferase, a gene encoding thereof, and a method for producing thereof

In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

The present invention provides a novel &#x3b2;-galactoside-&#x3b1;2,3-sialyltransferase and a nucleic acid encoding the sialyltransferase. The present invention also provides a microorganism producing the sialyltransferase, as well as a method for producing the sialyltransferase using such a microorganism. The present invention further provides a vector carrying a nucleic acid encoding the sialyltransferase, and a host cell transformed with the vector, as well as a method for producing a recombinant &#x3b2;-galactoside-&#x3b1;2,3-sialyltransferase. The present invention further provides a method for preparing a sialylsugar chain, which uses the sialyltransferase of the present invention.

&#x3b2;-galactoside-&#x3b1;2,3-sialyltransferase, a gene encoding thereof, and a method for producing thereof

&#x3b2;-galactoside-&#x3b1;2,6-sialyltransferase, a gene encoding thereof, and a method for producing thereof

There is provided a DC-DC converter control circuit, wherein a reference feedback signal related to a supply voltage to a load is compared to a reference oscillation signal to generate a result of comparison. The result of comparison is used as a switching control signal to control the supply voltage to the load. The result of comparison is frequency divided to generate a frequency divided signal; and the switching control signal is generated in response to the frequency divided signal.

DC-DC converter control circuit

Growing community of inventors

Kanagawa, Japan

Hiroshi Tsukamoto