Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Hiroshi Tsuchiya

Kosuke Imafuku

Yukio Naito

Yoshio Fukasawa

Kazuya Nagaseki

Akira Koshiishi

Keizo Hirose

Masayuki Tomoyasu

Ryuji Ohtani

Ryo Nonaka

Hideo Kato

Shosuke Endo

Kazuhiro Tahara

Etsuo Iijima

Tsutomu Higashiura

Isao Kobayashi

Shuji Mochizuki

Naoto Sagae

There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.

Plasma processing apparatus and control method thereof

An RF power (Bottom RF) from a radio-frequency power sourceis turned off (t) and the supply of a He gasto a back face of a wafer W is stopped (t) when an end point detector(EPD) detects an end point (t), and a high-voltage DC power source(HV) is turned off (t) under the condition in which an RF power (Top RF) from a radio-frequency power sourceis controlled to fall within a range in which etching does not progress and plasma discharge can be maintained (t). This process enables the inhibition of the adhesion of particles while an etching amount is accurately controlled.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

Plasma processing apparatus

A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

Plasma processing method and plasma etching method

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Yamanashi-ken, Japan

Hiroshi Tsuchiya