Kabushiki Kaisha Toshiba

Other

Ricoh Company, Ltd.

Kyowa Hakko Kogyo Co., Ltd.

Kyowa Yuka Co., Ltd.

Kyowa Hakko Chemical Co., Ltd.

Hiroshi Toyoda

Ikuo Shimizu

Hisashi Kaneko

Motoharu Kinugasa

Masahiko Hasunuma

Kazuhide Abe

Tatsuya Tomura

Shiho Yamada

Tetsuo Matsuda

Takashi Kawakubo

Atsuko Sakata

Soh Noguchi

Tsutomu Satoh

Masanori Ikuta

Tsutomu Sato

Koji Yamakawa

Yasunobu Ueno

Motomasa Imai

Koji Sakui

Kazuhiko Itaya

Tohru Yashiro

Akihiro Kajita

Michihiko Nishigaki

Noriaki Matsunaga

Toshihiko Nagano

Ryoichi Ohara

Takaaki Yasumoto

Sachiyo Ito

Kenya Sano

Naoko Yanase

Mitsuo Harata

Hironobu Shibata

Shoshiro Matsushita

Kenji Mutoh

Hiroshi Tomita

Hiroyuki Yano

Gaku Minamihaba

Kazuaki Nakajima

Tomomi Ishimi

Makoto Wada

Kei Watanabe

Tatsuo Mikami

Tsuguo Yamaoka

Dai Fukushima

Shinichi Nakao

Yumi Hayashi

Seiichi Omoto

Yukiyoshi Ito

Mitsuhiro Nakao

Toshiyuki Morita

Takashi Kawanoue

Masami Miyauchi

Toshiaki Komukai

Kyoko Katagi

Yuki Nakamura

Kazuyuki Higashi

Yasuyuki Sonoda

Noboru Sasa

Hideaki Hirabayashi

Yasuhiro Higashi

Soichi Yamashita

Hisakazu Iizuka

Akitsugu Hatazaki

Jun-ichi Wada

Kenichi Koseki

Yoshiko Kohanawa

Hirotaka Kinoshita

Asako Okajima

Takeshi Usami

Kazumasa Ito

Asako Tanaka

A semiconductor memory device according to an embodiment comprises a stacked body, a semiconductor layer, a charge accumulation layer, and a slit portion. The stacked body includes a plurality of control gate electrodes stacked above a substrate. The semiconductor layer has one end thereof connected to the substrate, and faces the plurality of control gate electrodes. The charge accumulation layer is positioned between the control gate electrode and the semiconductor layer. The slit portion extends in a direction of the substrate from a surface of the stacked body, wherein the slit portion has its longitudinal direction in a direction intersecting the first direction.

Semiconductor memory device and method of manufacturing the same

A semiconductor device according to the present embodiment includes a first wiring part located above a substrate and made of a first metal material. A second wiring part is provided as being superimposed on the first wiring part and having a width substantially equal to that of the first wiring part. A first resistivity of the first wiring part is lower than a second resistivity of the second wiring part when the first and second wiring parts have a first width. The second resistivity is lower than the first resistivity when the first and second wiring parts have a second width larger than the first width. The semiconductor device includes both of an area in which the first and second wiring parts have the first width and an area in which the first and second wiring parts have the second width.

Semiconductor device and manufacturing method thereof

A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Method for fabricating semiconductor device and semiconductor device

A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300&#xb0; C.

An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion.

Method for manufacturing semiconductor device

A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Piezoelectric thin film device and method for manufacturing the same

The present invention relates to an optical recording medium containing a first substrate, a first information layer, an intermediate layer, a second information layer and a second substrate in this order, wherein the first information layer contains a first recording layer disposed on the first substrate and the second information layer contains a reflective layer, a second recording layer containing an organic dye and a protective layer which are disposed on the second substrate in this order; and the second recording layer contains an organic dye which is at least one elected from the group consisting of the specified squarylium metal chelate compounds.

Optical recording medium, recording and reproducing method thereof, and optical recording apparatus

A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device

A method for manufacturing a semiconductor device includes forming, on a substrate having a recessed portion on a surface, a plating film which is at least buried in the recessed portion and has a higher impurity concentration in an upper portion than in a lower portion, thermally treating the plating film, and removing the thermally treated plating film except for a portion buried in the recessed portion.

Interconnect metallization method having thermally treated copper plate film with reduced micro-voids

The invention provides a photopolymerizable composition having a high photosensitivity, which comprises a metal complex of a squarylium compound, a radical generator, and a compound having at least one ethylenically unsaturated double bond. The photopolymerizable composition of the present invention is advantageously used for a visible laser recording material such as a PS (Presensitized Plate) for laser direct plate-making, a dry film resist, a digital proof, a hologram, or the like, a panchromatic sensitive material (e.g., a sensitive material for a color hologram and a sensitive material used for full-color display and containing a photopolymerizable composition in a microcapsule), paints, adhesives, and so on.

Photopolymerizable composition

A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive stress-applying film which is composed of a material having a thermal expansion coefficient of 60% or less compared with a thermal expansion coefficient of a metal composing the plated film; heat-treating while applying a compressive stress to the plated film by the compressive stress-applying film; and removing the compressive stress-applying film and the plated film which is not buried in the recessed portion.

Method of manufacturing semiconductor device

A filter of an electronic display device provides a clear image, the filter comprising an squarylium compound represent by formula (II): 

Filters of electronic displays

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Kamakura, Japan

Hiroshi Toyoda