Hitachi, Ltd.

Oki Data Corporation

Hitachi-high-technologies Corporation

Hitachi Metals, Ltd.

Hiroshi Toyama

Hiroyuki Shinada

Hideo Todokoro

Mitsugu Sato

Yutaka Kaneko

Yasutsugu Usami

Atsuko Takafuji

Mikio Ichihashi

Satoru Fukuhara

Katsuya Sugiyama

Yuko Iwabuchi

Hiroyoshi Mori

Yukio Nakamura

Yasuhiko Nara

Tomoharu Obuki

Yasuhiro Mitsui

Tohru Ando

Tsutomu Saito

Masaaki Komori

Munetoshi Fukui

Katsuo Ooki

Hirofumi Sukeda

Mitsuhiro Nakamura

Hiroshi Makino

Hideki Saga

Takashi Ohshima

Masahiro Sasajima

Tadao Ino

Tsuyoshi Miyai

Katsuo Oki

An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently. In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.

Inspection device

The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.

Method and an apparatus of an inspection system using an electron beam

An information display apparatus includes a matrix of thin-film light-emitting diodes (LEDs) disposed on a transparent substrate. The thin-film LEDs are epitaxially grown on a semiconductor substrate, then transferred in strips to the transparent substrate, anchored by intermolecular forces, and separated into individual LEDs by photolithography and etching. The anodes and cathodes of the thin-film LEDs are connected to anode and cathode driving circuits by a matrix of thin-film electrical paths formed on the transparent substrate. The matrix of LEDs and interconnections is dense enough to display images of high quality, and provides enough pixels for the display of useful text and graphics on even small information display devices.

Information display apparatus having a plurality of thin-film light-emitting diodes

A light source apparatus emits light image information. A reflective layer is formed on a planarization film formed on a metal substrate. LED thin films are arranged in a matrix having columns extending in first directions and rows extending in second directions perpendicular to the first directions, the LED thin films being bonded to the reflective layer by means of intermolecular force. First wires are connected to first electrodes of the LED thin films. Second wires are connected to second electrodes of the LED thin films. A first driver circuit selectively electrically drives the LED thin films, arranged in the rows, via the plurality of first wires. A second driver circuit selectively electrically drives the LED thin films, arranged in the rows, via the plurality of second wires.

Light source apparatus and head-up display apparatus incorporating the light source apparatus

An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Specimen inspection equipment and how to make the electron beam absorbed current images

Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Method and apparatus of an inspection system using an electron beam

A backlight device includes a first substrate having optical transparency and having first and second surfaces opposite to each other. An LED thin-film is fixed to the first surface of the first substrate. An anode electrode and a cathode electrode are formed on the LED thin-film. An anode driver IC and a cathode driver IC are provided for driving the LED thin-film to emit light. An anode wiring and a cathode wiring are provided on the first surface of the first substrate. A second substrate has optical transparency, and has first and second surfaces opposite to each other. The second surface of the second substrate faces the first surface of the first substrate. A reflection film is provided on the first surface of the second substrate. A light diffusion plate is provided so as to face the second surface of the first substrate and has a function to diffuse incident light.

LED backlight device and LCD device

A backlight device includes a first substrate having optical transparency and having a first surface and a second surface. An LED thin-film is fixed to the first surface of the first substrate. The LED thin-film is formed of epitaxially grown inorganic material layers as a P-N junction device. An anode electrode and a cathode electrode are formed on the LED thin-film. An anode driver IC and a cathode driver IC are provided for driving the LED thin-film. An anode wiring is provided for connecting the anode driver IC and the anode electrode, and a cathode wiring is provided for connecting the cathode driver IC and the cathode electrode. A second substrate has optical transparency and having a function to diffuse incident light. The second substrate is provided so as to face the second surface of the first substrate.

An LED backlight device includes a substrate having an optical transparency and an LED thin-film layered structure fixed to a first surface of the substrate. The LED thin-film layered structure is formed of epitaxially grown inorganic material layers as a P-N junction device. An anode electrode and a cathode electrode are formed on the LED thin-film layered structure. An anode driver IC and a cathode driver IC are provided for driving the LED thin-film layered structure. A wiring structure electrically connects the anode driver IC and the anode electrode of the LED thin-film layered structure and electrically connects the cathode driver IC and the cathode electrode of the LED thin-film layered structure. A phosphor is formed on the second surface of the substrate opposite to the first surface.

A backlight device includes a first substrate, and an LED thin-film layered structure (epitaxially grown inorganic material layers) fixed to a surface of the first substrate. An anode electrode and a cathode electrode are formed on the LED thin-film layered structure. An anode driver IC and a cathode driver IC are provided for driving the LED thin-film layered structure. A wiring structure electrically connects the anode driver IC and the anode electrode of the LED thin-film layered structure, and electrically connects the cathode driver IC and the cathode electrode of the LED thin-film layered structure. A second substrate has an optical transparency and is disposed to face the surface of the first substrate on which the LED thin-film layered structure is formed. A phosphor is formed on a surface of the second substrate facing the first substrate and is disposed on a position corresponding to the LED thin-film layered structure.

An LED backlight device includes a first substrate having optical transparency and having first and second surfaces. An LED thin-film layered structure is fixed to the first surface of the first substrate, and is formed of epitaxially grown inorganic material layers as a P-N junction device. An anode electrode of the LED thin-film layered structure is connected to an anode driver IC via an anode wiring. A cathode electrode of the LED thin-film layered structure is connected to a cathode driver IC via a cathode wiring. A phosphor is provided on the second surface of the first substrate. The LED backlight device further includes a second substrate having optical transparency and having first and second surfaces. The first surface of the second substrate faces the first surface of the first substrate. A reflection layer is provided on the second surface of the second substrate.

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Hachioji, Japan

Hiroshi Toyama