Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Hiroshi Toya

Makoto Inagaki

Masayuki Masuyama

Takashi Fujioka

Hiroyuki Kobayashi

Yasuyuki Endoh

Yasuyuki Endo

Takahiro Muroshima

Hiroshi Kubo

A solid-state imaging device according to an aspect of the present invention includes: an imaging area including a plurality of pixels arranged in rows and columns, each of the plurality of pixels converting incident light into a pixel signal; a column signal line provided for each of the columns, for reading out the pixel signal; and a current source connected to the column signal line, in which the current source includes: three transistors connected in series and provided between the column signal line and a GND line; and a transistor having a drain and a source each of which is connected to a different one of connection points connecting adjacent ones of the three transistors.

Solid-state imaging device

A solid-state imaging device includes: an image area including pixels arranged in a matrix; two row memories each of which alternatively (i) stores at a time pixel signals for each of rows, and (ii) sequentially provides each of the stored pixel signals; a reading control unit, during a horizontal period, sequentially reading the stored pixel signals one by one from a first line memory to cause the first line memory, the first line memory representing one of the two row memories; a holding control unit causing, during the horizontal period, a second line memory to hold pixel signals provided from one of the rows in the image area, the second line memory representing another one of the two row memories; and a reading suspending unit causing the reading control unit to suspend reading out the pixel signals from the first line memory during a noise occurrence predicted period.

Solid-state imaging device and imaging apparatus

A solid-state imaging device which can, in response to the problem of black-crush occurring in an image when strong light is enters the device, positively detect black-crush in a state in which a variance margin has been secured. The solid-state imaging device outputs a luminance signal in accordance with an amount of received light, and includes: a pixel circuit having a light-receiving element; a signal output circuit having a sampling transistor which outputs, from a second signal output line, a luminance signal in accordance with the amount of light received by the light-receiving element, based on an output signal from the pixel circuit; and a high-intensity judgment circuit which is coupled by the pixel circuit and a judgment input coupling capacitor, judges whether or not light entering the light-receiving element is of high intensity based on the output signal from the pixel circuit, and in the case of judging the entering light to be of high intensity, outputs a luminance signal indicating high intensity.

A solid-state imaging device includes column amplifiers that are each provided for a different one of column signal lines. Each column amplifier includes: a constant current circuit that supplies a constant current; an amplifier circuit that is connected in series with the constant current circuit, and amplifies a pixel signal from a corresponding column signal line and outputs the amplified signal from a point of connection with the constant current circuit; and a resistor circuit that is connected in parallel with the amplifier circuit and has a constant resistance.

A solid-state imaging device comprises a pixel array including a plurality of pixels arranged in rows and columns, and a readout unit operable to read out pixel signals of the pixels included in the pixel array row by row. The readout unit (i) reads out pixel signals of a row of pixels in column order of the pixel array during a horizontal readout period, except during a readout-standby period that is within the horizontal readout period, and (ii) suspends reading out the pixel signals of the row of pixels in the column order during the readout-standby period.

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Nara, Japan

Hiroshi Toya