Kabushiki Kaisha Toshiba

Tokyo Electron Limited

Takata Corporation

Hitachi, Ltd.

Toshiba Memory Corporation

Ebara Corporation

Other

Ntt Electronics Corporation

Nippon Telegraph and Telephone Corporation

Toshiba Energy Systems & Solutions Corporation

Ckd Corporation

Toshiba Ceramics Co., Ltd.

Tdk Corporation

Teijin Limited

Kanto Kagaku Kabushiki Kaisha

Hiroshi Tomita

Hisashi Okuchi

Soichi Nadahara

Hidekazu Hayashi

Yohei Sato

Masashi Sahashi

Yasuhito Yoshimizu

Tadashi Nishiyama

Yoshihiro Ogawa

Kunie Ogata

Hiromi Fuke

Tetsuhiko Mizoguchi

Masako Kodera

Shuji Iwanaga

Hitoshi Iwasaki

Hideaki Fukuzawa

Takayuki Toshima

Kenya Ito

Takehiko Orii

Yoshio Kimura

Hiroki Ohno

Motoyuki Sato

Kazuyuki Mitsuoka

Toshiro Sato

Gen You

Shigeya Kimura

Hisashi Yoshida

Mitsuaki Iwashita

Hiroaki Yamada

Atsuhito Sawabe

Masahide Tadokoro

Mitsuhiko Shirakashi

Hisao Miyazaki

Norio Kimura

Katsuyuki Sekine

Tomonori Aoyama

Tokuhisa Ohiwa

Kinji Hirai

Kikuo Yamabe

Katsuya Okumura

Yoshio Ozawa

Akira Miyata

Eiichi Nishimura

Takashi Kawakubo

Atsuko Sakata

Hisashi Kaneko

Shinichi Hayashi

Akihiro Kajita

Masahiko Hasunuma

Nobuaki Matsuoka

Hiroshi Toyoda

Suguru Enokida

Naoto Miyashita

Shigeru Tahara

Takuya Mori

Tetsuo Inoue

Mitsuhiro Omura

Kunihiro Miyazaki

Yu Ishii

Satoshi Wakatsuki

Sachiyo Ito

Hiroyuki Kawasaki

Hisashi Muraoka

Tatsuo Shimizu

Haruo Okano

Katsuhiko Hieda

Akira Okada

Isao Suzuki

Masayuki Kitamura

Gaku Minamihaba

Junichi Wada

Yuji Yamada

Toru Miura

Yukiteru Matsui

Takeshi Ishizaki

Junji Kunisawa

Yusuke Tanaka

Yuki Inoue

Yuichi Suzuki

Kenya Suzuki

Toshiyuki Sasaki

Yasunobu Onishi

Norio Ishikawa

Akira Fukunaga

Kazuhiro Eguchi

Eishi Shiobara

Tetsuya Kurosawa

Hisataka Hayashi

Norihisa Koga

Akifumi Gawase

Daisuke Ikeno

Yutaka Yamaguchi

Muneo Nishizawa

Yoshihiro Uozumi

Shinya Takyu

Tatsuhiko Higashiki

Hideharu Moro

Motohaya Ishii

Yuichi Douki

Toyohisa Tsuruda

A substrate inspection apparatus configured to inspect a substrate with an image obtained by imaging a surface of the substrate includes a holderconfigured to hold the substrate; a first light source unitconfigured to emit visible light to the substrate held by the holder; a second light source unitconfigured to emit infrared light to the substrate held by the holder; a first imaging sensor configured to capture a visible light image of the surface of the substrate by receiving first reflected light emitted from the substrate as a result of radiating the visible light; and a second imaging sensor configured to capture an infrared light image of the surface of the substrate by receiving second reflected light emitted from the substrate as a result of radiating the infrared light.

Substrate inspection apparatus, substrate inspection method, and recording medium

This method includes, in a substrate treatment system, acquiring an image of a reference substrate which is a reference for condition setting; and acquiring an image of a treated substrate on which the predetermined treatment has been performed under a first treatment condition. A deviation amount in information between the image of the treated substrate and the image of the reference substrate is calculated. A correction amount of the treatment condition is calculated based on a correlation model indicating a correlation between a change amount in the information in the image of the treated substrate and a change amount in the treatment condition and on the deviation amount in the information. Also included is a setting of a second treatment condition based on the correction amount and a performing of the treatment on a target substrate based on the set second treatment condition.

Treatment condition setting method, storage medium, and substrate treatment system

According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.

Thermionic power generation element and thermionic power generation module

According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.

Power generation element

According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Power generation element and power generation system

This method includes a step of imaging, by an imaging apparatus in a substrate treatment system, a reference substrate which is a reference for condition setting and acquiring a captured image of the reference substrate; and a step of imaging, by the imaging apparatus, a treated substrate on which the predetermined treatment has been performed under a current treatment condition and acquiring a captured image of the treated substrate. A deviation amount in color information between the captured image of the treated substrate and the captured image of the reference substrate is calculated. A correction amount of the treatment condition is calculated based on a correlation model acquired in advance and on the deviation amount in the color information. Also included is a step of setting the treatment condition based on the correction amount and performing the treatment on a target substrate based on the set treatment condition.

According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes AlGaN (0&#x3c;x1&#x2264;1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.

Electron emitting element and power generation element

A method of inspecting a substrate, includes: creating a model indicating a relation between a pixel value in a captured image of the substrate and a feature amount of a film on the substrate, based on a measured feature amount of a film on a creating substrate and a captured image generated by imaging the creating substrate by an apparatus in a first system; imaging an object substrate by an apparatus in a second system to generate a captured image, and calculating an estimated feature amount of a film on the object substrate, based on the captured image and the model; calculating a statistical value of the estimated feature amounts of the object substrates; and calculating an offset amount for the estimated feature amount from a measured feature amount of a film formed by performing a same treatment on an offset substrate in the second system and the statistical value.

Substrate inspection method, substrate inspection system, and control apparatus

An optical module that has a structure ensuring reduction in size. The optical module has a structure where a part of a fiber block is protruded from a housing. By including a thin plate, this optical module can avoid entering of dust in the housing, allows a position shift of the fiber block due to a mounting position error of an optical component in the housing, a position shift of an opening portion due to a dimensional error of the housing, or a displacement due to a temperature change, and can reduce the coupling loss due to the optical axis misalignment.

Optical module

Provided is a head-mounted video presentation device which has a visible light wavelength conversion and is designed for a user having degraded sensitivity to a first wavelength band as a part of a visible light wavelength band as compared with a second wavelength band as the remaining part of the visible light wavelength band. A head-mounted video presentation device for a user having degraded sensitivity to a first wavelength band as a part of a visible light wavelength band as compared with a second wavelength band as the remaining part of the visible light wavelength band includes: an imaging unit for taking a video in a viewing direction of the user to acquire first video information; a wavelength conversion unit for converting at least a part of a color signal for at least the first wavelength band in the first video information into a color signal expressing colors in the second wavelength band, and outputting second video information based on the converted color signal; and a video presentation unit for presenting, based on the second video information, a wavelength-converted video in the viewing direction of the user, to the user.

Head mounted type video presenting device including visible light wavelength converting unit

A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Substrate processing apparatus and substrate processing method

According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.

Method for fabricating semiconductor device

In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

Surface treatment apparatus and method for semiconductor substrate

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (HO) of a first content rate to etch the first metallic film. The second liquid includes water (HO) at a second content rate higher than the first content rate after the etching has started.

Substrate treatment method and substrate treatment apparatus

Growing community of inventors

Yokohama, Japan

Hiroshi Tomita