Fujitsu Corporation

Fujitsu Media Devices Limited

Graphtec Kabushiki Kaisha

Hiroshi Tokunaga

Hiroshi Ishikawa

Masaaki Ono

Toshio Hanazawa

Tsutomu Miyashita

Nobuo Toyokura

Hajime Ishikawa

Masaichi Shinoda

Shinichi Inoue

Kenji Nagata

Kenji Yamamoto

Osamu Tsuboi

Hiroshi Yoshida

Yoshitaka Nakamura

Shiro Takeda

Toshisuke Kitakohji

Shoji Okuda

Minoru Nakajima

Yoshitaka Tsunoi

An image reading apparatus including a plurality of image sensors aligned in a zigzag shape and a draft carrying unit operated to a draft to carry in a sub scanning direction, the image reading apparatus forming an image data of a total of the draft from image data provided by the respective image sensors. The draft carrying unit is provided to be operated to the draft in a region aligned in a zigzag shape to constitute an inverse phase relative to the image sensor.

Image reading apparatus

The present invention provides the stress detection method for force sensor device with multiple axis sensor device and force sensor device employing this method, whose installation angle is arbitrary. The stress detection method includes, first and second force sensors whose detection axes are orthogonal to each other. When the detection axis of first force sensor forms angle &#x3b8; with direction of detected stress Ax, and the stress component of direction perpendicular to direction of the detected stress Ax is Az, output Apx of the axis direction of first force sensor is found as Apx=&#x3b1;(Ax&#xd7;cos &#x3b8;+Az&#xd7;sin &#x3b8;), and output Apz of the axis direction of the second force sensor is found as Apz=&#x3b1;(Ax&#xd7;sin &#x3b8;+Az&#xd7;cos &#x3b8;), and, when &#x3b1;and &#x3b1;are detection sensitivity coefficients of first and second force sensors respectively, the detection sensitivity coefficient &#x3b1;of second force sensor is set as &#x3b1;=&#x3b1;tan &#x3b8;, and the detected stress Ax is found as Ax=(Apx&#x2212;Apz)/&#x3b1;(cos &#x3b8;&#x2212;tan &#x3b8;&#xd7;sin &#x3b8;).

Stress detection method for force sensor device with multiple axis sensor and force sensor device employing this method

Stress detection method for sensor device with multiple axis sensor and sensor device employing this method

An inertial sensor such as an acceleration sensor or gyro can have superior impact resistance by regulating displacement of a weight portion in the direction of an upper limit. The sensor includes a sensor portion that has a fixing part, a weight portion the height of which is a predetermined size shorter than that of the fixing part, and a beam portion that links the weight portion and the fixing part; a plate-like first stopper portion that covers the weight portion and is bonded to the fixing part with clearance of a predetermined size from the weight portion; and a flat, plate-like second stopper portion that is connected to the fixing part via a bump of a predetermined height on the side opposite the first stopper portion.

Inertial sensor

An inertial sensor includes a sensing portion having a weight supported by beams, the weight being a movable portion, and a weight stopper that limits a movable range of the weight, the weight stopper being arranged in a vicinity of the weight with a given clearance and being a part of a substrate for the inertial sensor processed with MEMS techniques.

The method for fabricating a micro machine comprises the step of burying an oxide filmin a first semiconductor substratethe step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation filmtherebetween, the step of forming a first maskwith an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first maskand an oxide filmas a mask to thereby form a spring portionintegral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second maskwith an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second maskand the step of etching the insulation filmin the first region and the second region. The thickness of the torsion bar can be easily controlled. Thus, a micro machine having a torsion bar can be fabricated with high yields.

Method for fabricating a micro machine

A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula: ##STR1## wherein each R.sub.1 is independently selected from alkyl (Cl-6) groups, and phenyl and halophenyl groups, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are independently selected from hydrogen, alkoxy (Cl-3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices.

Patterning process using ladder-type organosiloxane resin and process

A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.

Method for producing MOS semiconductor device

MIS Device having a metal and insulating layer containing at least one

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Kanagawa, Japan

Hiroshi Tokunaga